| No. |
Part Name |
Description |
Manufacturer |
| 12001 |
ATSAM9753 |
Integrated Digital Music Instrument |
Atmel |
| 12002 |
AUIRFZ24NSTRR |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 12003 |
AUIRFZ44NSTRR |
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 12004 |
AUIRLZ24NSTRL |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 12005 |
AVC16T245DGGR-D |
16-Bit Dual-Supply Bus Transceiver with Configurable Voltage-Level Shifting and 3-State Outputs 48-TSSOP -40 to 85 |
Texas Instruments |
| 12006 |
AVCE6467T |
Digital Media System-on-Chip 529-FCBGA |
Texas Instruments |
| 12007 |
AVCE6467TZUTL1 |
Digital Media System-on-Chip 529-FCBGA |
Texas Instruments |
| 12008 |
AZ809NSTR-E1 |
3-PIN MICROPROCESSOR RESET CIRCUITS |
Diodes |
| 12009 |
AZ809NSTR-G1 |
3-PIN MICROPROCESSOR RESET CIRCUITS |
Diodes |
| 12010 |
B120_B |
20V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12011 |
B130_B |
30V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12012 |
B140_B |
40V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12013 |
B150_B |
50V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12014 |
B160_B |
60V; 1.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12015 |
B220_A |
20V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12016 |
B230_A |
30V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12017 |
B240_A |
40V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12018 |
B250_A |
50V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12019 |
B260_A |
60V; 2.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12020 |
B320_A_B |
20V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12021 |
B330_A_B |
30V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12022 |
B340_A_B |
40V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12023 |
B350_A_B |
50V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12024 |
B360_A_B |
60V; 3.0A surface mount schottky barrier rectifier. Guard ring die construction for transient protection |
Diodes |
| 12025 |
BA128 |
Epitaxial Silicon Diode |
Texas Instruments |
| 12026 |
BA130 |
Epitaxial Silicon Diode |
Texas Instruments |
| 12027 |
BA154 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 12028 |
BA166 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| 12029 |
BA166 |
Glass passivated silicon diode, marked with colored rings brown-blue-blue or plain text |
Texas Instruments |
| 12030 |
BA167 |
Glass Passivated Silicon Diode for general purpose application |
Texas Instruments |
| | | |
