| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 1202 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1203 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1204 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1205 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1206 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1207 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1208 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1209 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1210 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1211 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1212 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1213 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1214 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1215 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 1216 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1217 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1218 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 1219 |
1S8 |
1 AMPERE SCHOTTKY BARRIER RECTIFIERS(VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 1220 |
1S80 |
Germanium Point Contact Diode, intended for use as a General Detector |
Hitachi Semiconductor |
| 1221 |
1SMB2EZ100 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1222 |
1SMB2EZ11 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1223 |
1SMB2EZ110 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1224 |
1SMB2EZ12 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1225 |
1SMB2EZ120 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1226 |
1SMB2EZ13 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1227 |
1SMB2EZ130 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1228 |
1SMB2EZ14 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1229 |
1SMB2EZ140 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 1230 |
1SMB2EZ15 |
SURFACE MOUNT SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
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