| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
1214-370V |
Pulsed Power L-Band (Si) |
Microsemi |
| 1202 |
1214-55 |
Pulsed Power L-Band (Si) |
Microsemi |
| 1203 |
1214-550P |
Pulsed Power L-Band (Si) |
Microsemi |
| 1204 |
1214-700P |
Pulsed Power L-Band (Si) |
Microsemi |
| 1205 |
1214-700P1 |
Pulsed Power L-Band (Si) |
Microsemi |
| 1206 |
1214-800P |
Pulsed Power L-Band (Si) |
Microsemi |
| 1207 |
1241CBU |
OC-12/STM-4 uncooled laser transmitter. Average output power (dBM): -15(min),-11(typ),-8(max). Center wavelengrh(nm): 1274(min),1356(max). Connector SC. |
Agere Systems |
| 1208 |
128-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1209 |
12F10 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1210 |
12F100 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1211 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 1212 |
12F100R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1213 |
12F10R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1214 |
12F120 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1215 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 1216 |
12F120R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1217 |
12F20 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1218 |
12F20R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1219 |
12F40 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1220 |
12F40R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1221 |
12F60 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1222 |
12F60R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1223 |
12F80 |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1224 |
12F80R |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
| 1225 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
| 1226 |
1307036 |
The Powerpuck GPS Antenna |
Tyco Electronics |
| 1227 |
132-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1228 |
133-Z |
MOS Field Effect Power Transistors |
Unknow |
| 1229 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 1230 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
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