| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
SQ2857 |
Chip Type 2C2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 1202 |
SQ2857F |
Chip Type 2C2857 Geometry 0011 Polarity NPN |
Semicoa Semiconductor |
| 1203 |
SST-SALEM1P-EV |
Single Phase Meter Evaluation Unit using the ADSST-EM-1011 Chipset |
Analog Devices |
| 1204 |
ST10C167 |
16-BIT MCU - 4KB RAM - 32KB ROM - 111 I/O - 1 CAN 2.0B INTERFACE |
SGS Thomson Microelectronics |
| 1205 |
ST10C167 |
16-BIT MCU - 4KB RAM - 32KB ROM - 111 I/O - 1 CAN 2.0B INTERFACE |
ST Microelectronics |
| 1206 |
ST10C167_DS |
16-BIT MCU - 4KB RAM - 32KB ROM - 111 I/O - 1 CAN 2.0B INTERFACE |
SGS Thomson Microelectronics |
| 1207 |
ST10F167_DS |
16-BIT MCU - 4KB RAM - 128KB FLASH MEMORY - 111 I/O - 1 CAN 2.0B INTERFACE |
SGS Thomson Microelectronics |
| 1208 |
ST10F168 |
ST10F168 - 16-BIT MCU - 8KB RAM - 256KB FLASH MEMORY - 111 I/O - 1 CAN 2.0B INTERFACE |
SGS Thomson Microelectronics |
| 1209 |
ST10F168 |
ST10F168 - 16-BIT MCU - 8KB RAM - 256KB FLASH MEMORY - 111 I/O - 1 CAN 2.0B INTERFACE |
ST Microelectronics |
| 1210 |
ST10R167 |
16-BIT MCU - 4KB RAM - ROMLESS - 111 I/O - 1 CAN 2.0B INTERFACE |
ST Microelectronics |
| 1211 |
ST10R167-Q3 |
16-BIT MCU - 4KB RAM - 32KB ROM - 111 I/O - 1 CAN 2.0B INTERFACE |
ST Microelectronics |
| 1212 |
ST10R167-Q3-TR |
16-BIT MCU - 4KB RAM - ROMLESS - 111 I/O - 1 CAN 2.0B INTERFACE |
ST Microelectronics |
| 1213 |
ST10R167-Q6 |
16-BIT MCU - 4KB RAM - 32KB ROM - 111 I/O - 1 CAN 2.0B INTERFACE |
ST Microelectronics |
| 1214 |
ST10R167-Q6-TR |
16-BIT MCU - 4KB RAM - ROMLESS - 111 I/O - 1 CAN 2.0B INTERFACE |
ST Microelectronics |
| 1215 |
STB11NM80 |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/D2PAK MDMESH POWER MOSFET |
ST Microelectronics |
| 1216 |
STB11NM80T4 |
N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/TO-220FP/D2PAK/TO-247 MDMESH MOSFET |
ST Microelectronics |
| 1217 |
STB12NM50ND |
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 1218 |
STB13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 1219 |
STB13NM60N |
N-channel 600 V, 0.28 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 1220 |
STB15N65M5 |
N-channel 650 V, 0.308 Ohm, 11 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 1221 |
STB16PF06L |
P-CHANNEL 60V - 0.11 Ohm - 16A D2PAK STripFET MOSFET |
ST Microelectronics |
| 1222 |
STB16PF06LT4 |
P-CHANNEL 60V - 0.11 Ohm - 16A D2PAK STripFET MOSFET |
ST Microelectronics |
| 1223 |
STB50NH02L |
N-CHANNEL 24V - 0.011 OHM - 50A D2PAK STRIPFET III POWER MOSFET |
ST Microelectronics |
| 1224 |
STD111 ASIC |
Introduction |
Samsung Electronic |
| 1225 |
STD111 ASIC |
Book Contents |
Samsung Electronic |
| 1226 |
STD111 ASIC |
PLL 2013X |
Samsung Electronic |
| 1227 |
STD111 ASIC |
Characteristics |
Samsung Electronic |
| 1228 |
STD11NM65N |
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package |
ST Microelectronics |
| 1229 |
STD12NM50ND |
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in DPAK package |
ST Microelectronics |
| 1230 |
STD13N60M2 |
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
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