| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
JAN1N6169A |
Transient Voltage Suppressor |
Microsemi |
| 1202 |
JAN1N6169AUS |
Transient Voltage Suppressor |
Microsemi |
| 1203 |
JAN1N6169US |
Transient Voltage Suppressor |
Microsemi |
| 1204 |
JANS1N6169A |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 1205 |
JANS1N6169AUS |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 1206 |
JANTX1N6169 |
Transient Voltage Suppressor |
Microsemi |
| 1207 |
JANTX1N6169A |
Transient Voltage Suppressor |
Microsemi |
| 1208 |
JANTX1N6169AUS |
Transient Voltage Suppressor |
Microsemi |
| 1209 |
JANTX1N6169US |
Transient Voltage Suppressor |
Microsemi |
| 1210 |
JANTXV1N6169 |
Transient Voltage Suppressor |
Microsemi |
| 1211 |
JANTXV1N6169A |
Transient Voltage Suppressor |
Microsemi |
| 1212 |
JANTXV1N6169AUS |
Transient Voltage Suppressor |
Microsemi |
| 1213 |
JANTXV1N6169US |
Transient Voltage Suppressor |
Microsemi |
| 1214 |
KD16901 |
AUDIO EFFECT PROCESSOR |
Samsung Electronic |
| 1215 |
KD16903 |
DATA PROCESSOR |
Samsung Electronic |
| 1216 |
KSD1691 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1217 |
KSD1691 |
60 V, 5 A, NPN epitaxial silicon transistor |
Samsung Electronic |
| 1218 |
KSD1691GS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1219 |
KSD1691OS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1220 |
KSD1691OSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1221 |
KSD1691YS |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1222 |
KSD1691YSTSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1223 |
KSD1691YSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 1224 |
KSD1692 |
NPN Silicon Darlington Transistor |
Fairchild Semiconductor |
| 1225 |
KSD1692 |
NPN (HIGH DC CURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C) |
Samsung Electronic |
| 1226 |
KSD1692YS |
NPN Silicon Darlington Transistor |
Fairchild Semiconductor |
| 1227 |
KSD1693 |
60 V, 3 A, NPN silicon darlington transistor |
Samsung Electronic |
| 1228 |
KSY10E8169 |
GaAs Hall Sensor with high sensitivit... |
Infineon |
| 1229 |
KTA1695 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 1230 |
KTD1691 |
General Purpose Transistor |
Korea Electronics (KEC) |
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