No. |
Part Name |
Description |
Manufacturer |
1201 |
NDL5481P |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 120 mm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE |
NEC |
1202 |
NDL5481P1 |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 120 mm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE |
NEC |
1203 |
NDL5481P2 |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 120 mm InGaAs PIN PHOTO DIODE RECEPTACLE MODULE |
NEC |
1204 |
NDL5730P |
2 mW, 20 mA, laser diode module |
NEC |
1205 |
NE34018-T1-64 |
GaAs HJ-FET L to S band low noise amplifier. Idss range 60-120 mA. |
NEC |
1206 |
NE67400 |
L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA. |
NEC |
1207 |
NE67483B |
L to Ku band low noise amplifier N-channel GaAs MESFET. Idss 20 to 120 mA. |
NEC |
1208 |
NLSX3373 |
Translator, Dual-Supply Level, 2-Bit, 20 Mb/s |
ON Semiconductor |
1209 |
NLSX3378 |
4-Bit 20 Mb/s Dual-Supply Level Translator |
ON Semiconductor |
1210 |
NS32381V-20 |
20 MHz, floating-point unit |
National Semiconductor |
1211 |
NS32580-20 |
1.5 W, 20 MHz, floating-point controller |
National Semiconductor |
1212 |
NSI45020 |
45 V, 20 mA ± 15%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
1213 |
NSI45020A |
45 V, 20 mA ± 10%, 460 mW package, Constant Current Regulator, SOD-123 |
ON Semiconductor |
1214 |
NSI45020JZ |
LED Driver, Adjustable Constant Current Regulator, 45 V, 20 mA |
ON Semiconductor |
1215 |
NTMD5838NL |
Power MOSFET, 40 V, 8.9 A, 20 mΩ, Dual N-Channel |
ON Semiconductor |
1216 |
NTMS5838NL |
Power MOSFET, 40 V, 7.5 A, 20 mΩ |
ON Semiconductor |
1217 |
NTUD3169CZ |
Small Signal MOSFET 20 V, 220 mA −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package |
ON Semiconductor |
1218 |
NVD6824NL |
100V, 41A, 20 mOhm, Single N-Channel DPAK Logic Level Power MOSFET |
ON Semiconductor |
1219 |
NVD6828NL |
90 V, 41 A, 20 mOhm N-Channel Logic Level DPAK MOSFET |
ON Semiconductor |
1220 |
NX3008CBKV |
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET |
Nexperia |
1221 |
NX3008CBKV |
30 / 30 V, 400 / 220 mA N/P-channel Trench MOSFET |
NXP Semiconductors |
1222 |
NX3008PBKV |
30 V, 220 mA dual P-channel Trench MOSFET |
Nexperia |
1223 |
NX3008PBKV |
30 V, 220 mA dual P-channel Trench MOSFET |
NXP Semiconductors |
1224 |
NX7462LE-CC |
1480 nm InGaAsP MQW FP PUMP laser diode module for EDFA application (120 mW min). With SC-UPC connector. |
NEC |
1225 |
NX7527BF-AA |
1550 nm InGaAsP MQW FP pulsed laser diode for OTDR application (120 mW min). Flat mount flange. |
NEC |
1226 |
NX7529BB-AA |
1550 nm InGaAsP MQW FP pulsed laser diode for OTDR application (20 mW min). Flat mount flange. |
NEC |
1227 |
NX7661JB-BC |
1625 nm InGaAsP MQW FP pulsed laser diode for OTDR application (120 mW min). With FC-PC connector. |
NEC |
1228 |
NX8562LB279-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1527.99 nm. Frequency 196.20 THz. Anode ground. FC-PC connector. |
NEC |
1229 |
NX8562LB287-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1528.77 nm. Frequency 196.10 THz. Anode ground. FC-PC connector. |
NEC |
1230 |
NX8562LB295-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1529.55 nm. Frequency 196.00 THz. Anode ground. FC-PC connector. |
NEC |
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