| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
FC4B2218 |
MOSFETs for Lithium-ion Battery Protection |
Panasonic |
| 1202 |
FC4B22180L |
MOSFETs for Lithium-ion Battery Protection |
Panasonic |
| 1203 |
FDC40-24T0512 |
Input range:18-36 VDC;output voltage:5/+/-12 VDC; output current:4000/+/-850 mA;input current:2180 mA; 40 W DC-DC converter |
Power Mate Technology |
| 1204 |
FIN1218 |
LVDS 21-Bit Serializers/De-Serializers |
Fairchild Semiconductor |
| 1205 |
FIN1218MTD |
LVDS 21-Bit Serializers/De-Serializers |
Fairchild Semiconductor |
| 1206 |
FIN1218MTDX |
LVDS 21-Bit Serializers/De-Serializers |
Fairchild Semiconductor |
| 1207 |
FOD4218 |
6-Pin DIP 800V Random Phase Triac Driver Output Optocoupler |
Fairchild Semiconductor |
| 1208 |
FP2189 |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 1209 |
FP2189-PCB1900S |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 1210 |
FP2189-PCB2140S |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 1211 |
FP2189-PCB900S |
high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount |
WJ Communications |
| 1212 |
FTSO2218 |
NPN small signal general purpose amplifier & switch. |
Fairchild Semiconductor |
| 1213 |
FTSO2218A |
NPN small signal general purpose amplifier & switch. |
Fairchild Semiconductor |
| 1214 |
G218BR-D3 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
| 1215 |
G218BR-S4 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
| 1216 |
G218BR-S5 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
| 1217 |
G218BT-D3 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
| 1218 |
G218BT-S4 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
| 1219 |
G218BT-S5 |
Ultra 160 multi-mode LVD/SE SCSI terminator |
Global Mixed-mode Technology |
| 1220 |
GES2218 |
Planar epitaxial NPN silicon transistor. 30V, 800mA. |
General Electric Solid State |
| 1221 |
GES2218A |
Planar epitaxial NPN silicon transistor. 40V, 800mA. |
General Electric Solid State |
| 1222 |
GES6218-J1 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 1223 |
GS-R218 |
27W SWITCHING REGULATOR FOR AUTOMOTIVE APPLICATION |
SGS Thomson Microelectronics |
| 1224 |
GS-R218 |
27W SWITCHING REGULATOR FOR AUTOMOTIVE APPLICATION |
ST Microelectronics |
| 1225 |
GS816218 |
18Mb Burst SRAMs |
GSI Technology |
| 1226 |
GS816218B |
18Mb Burst SRAMs |
GSI Technology |
| 1227 |
GS816218B-133 |
8.5ns 133MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
| 1228 |
GS816218B-133I |
8.5ns 133MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
| 1229 |
GS816218B-150 |
7.5ns 150MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
| 1230 |
GS816218B-150I |
7.5ns 150MHz 1M x 18 18MB S/DCD synchronous burst SRAM |
GSI Technology |
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