| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
SMI-0806-102 |
SMD power inductor |
Micro Electronics |
| 1202 |
SMJ44C256-10 |
262144 by 4-bit dynamic random-access memory |
Austin Semiconductor |
| 1203 |
SMV20436-10 |
VBR:15V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
| 1204 |
STB80NE06-10 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE � POWER MOSFET |
SGS Thomson Microelectronics |
| 1205 |
STB80NE06-10 |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
ST Microelectronics |
| 1206 |
STK7406-105 |
SW REGULATOR IC STK7400 SERIES FIXED OSCILLATING TYPE |
SANYO |
| 1207 |
STP80N06-10 |
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 1208 |
STP80NE06-10 |
N - CHANNEL ENHANCEMENT MODE � SINGLE FEATURE SIZE � POWER MOSFET |
SGS Thomson Microelectronics |
| 1209 |
STP80NE06-10 |
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
ST Microelectronics |
| 1210 |
STW80N06-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 1211 |
STW80N06-10 |
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 1212 |
STW80N06-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 1213 |
STW80NE06-10 |
N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFET |
SGS Thomson Microelectronics |
| 1214 |
STW80NE06-10 |
N - CHANNEL 60V - 0.0085 Ohm - 80A - TO-247 STripFET � POWER MOSFET |
SGS Thomson Microelectronics |
| 1215 |
STW80NE06-10 |
N-CHANNEL 60V 0.0085 OHM 80A TO-247 STRIPFET POWER MOSFET |
ST Microelectronics |
| 1216 |
TA7657P |
6-10V; V(cc): 9.0V; 120mA; radio control receiver IC |
TOSHIBA |
| 1217 |
TC1276-10ENB |
Reset monitors for 3.3V systems, reset Vcc=2.88V |
Microchip |
| 1218 |
TC1276-10ENBTR |
The TC1275, TC1276 and TC1277 are cost-effective system supervisor circuits designed to monitor VCC in digital systems and provide ... |
Microchip |
| 1219 |
TC59S6416-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 1220 |
TIBPAL16R6-10C |
HIGH-PERFORMANCE IMPACT-X E PAL CIRCUITS |
Texas Instruments |
| 1221 |
TIBPAL16R6-10CFN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1222 |
TIBPAL16R6-10CFN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1223 |
TIBPAL16R6-10CFN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1224 |
TIBPAL16R6-10CFN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1225 |
TIBPAL16R6-10CFN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1226 |
TIBPAL16R6-10CJ |
HIGH-PERFORMANCE IMPACT-X E PAL CIRCUITS |
Texas Instruments |
| 1227 |
TIBPAL16R6-10CN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1228 |
TIBPAL16R6-10CN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1229 |
TIBPAL16R6-10CN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
| 1230 |
TIBPAL16R6-10CN |
10C - High-Performance Impact-X<TM> PAL<R> Circuits |
Texas Instruments |
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