| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
BFQ32 |
Silicon planar epitaxial PNP transistor in a subminiature plastic transfer-moulded T-package, intended for use in UHF and microwave |
Philips |
| 1202 |
BFQ32S |
Silicon planar epitaxial PNP transistor, intended for use in UHF applications |
Philips |
| 1203 |
BFQ34T |
Silicon planar epitaxial NPN transistor, intended for wideband amplification applications |
Philips |
| 1204 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 1205 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
| 1206 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
| 1207 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
| 1208 |
BFQ65 |
NPN microwave NPN transistor, designed for use in the GHz range, very low noise |
Philips |
| 1209 |
BFQ85 |
Epitaxial planar NPN transistor, intended for common-emitter, high gain, wide band application up to 1.5GHz |
SGS-ATES |
| 1210 |
BFQ88 |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 1211 |
BFQ88A |
Epitaxial planar NPN transistor in µX ceramic package intended for high-gain, wide-band application up to 2GHz |
SGS-ATES |
| 1212 |
BFR36 |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 1213 |
BFR36A |
Epitaxial planar ultra-linear high gain NPN transistor designed for CATV-MATV amplifier applications |
SGS-ATES |
| 1214 |
BFR38 |
Epitaxial planar PNP transistor intended for very low noise TV aerial amplifiers and MATV preamplifier applications up to 1GHz |
SGS-ATES |
| 1215 |
BFR90 |
Epitaxial planar NPN transistor, utilizing Planox® silicon nitride, intended for VHF-UHF wide band applications |
SGS-ATES |
| 1216 |
BFR90A |
NPN silicon planar epitaxial transistor intended for use in VHF and UHF wideband amplifiers |
Philips |
| 1217 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 1218 |
BFR90H |
Epitaxial planar NPN transistor, intended for VHF-UHF wide-band application |
SGS-ATES |
| 1219 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
| 1220 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 1221 |
BFR91H |
Epitaxial planar NPN transistor, designed for VHF-UHF wide-band application |
SGS-ATES |
| 1222 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
| 1223 |
BFR96S |
NPN silicon planar epitaxial transistor, primarily intended for MATV applications |
Philips |
| 1224 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1225 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 1226 |
BFT24 |
NPN transistor, intended for use in UHF low power amplifiers such as in pocket phones, paging systems, etc. |
Philips |
| 1227 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
| 1228 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 1229 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 1230 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
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