| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
| 1202 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 1203 |
3N201 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1204 |
3N202 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1205 |
3N203 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1206 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1207 |
3N204 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1208 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1209 |
3N205 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1210 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
| 1211 |
3N206 |
N-Channel dual-gate depletion-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 1212 |
3N207 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1213 |
3N208 |
Dual P-Channel Enhancement-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1214 |
3N211 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1215 |
3N212 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1216 |
3N213 |
N-Channel Dual-Gate Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1217 |
3N214 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1218 |
3N215 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1219 |
3N216 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1220 |
3N217 |
N-Channel Depletion-Type Insulated-Gate Field-Effect Transistor |
Texas Instruments |
| 1221 |
3N89 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 1222 |
3N96 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 1223 |
3N97 |
P-Channel Junction FET (Field-Effect Transistor) |
Motorola |
| 1224 |
3N98 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1225 |
3N99 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
| 1226 |
3SK122 |
MOS Field Effect Transistor |
NEC |
| 1227 |
3SK123A |
MOS Field Effect Transistor |
NEC |
| 1228 |
3SK124 |
MES Field Effect Transistor |
NEC |
| 1229 |
3SK131 |
MOS FIELD EFFECT TRANSISTOR |
NEC |
| 1230 |
3SK134B |
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD |
NEC |
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