| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
2SC3357-T1 |
For amplify high frequency and low noise. |
NEC |
| 1202 |
2SC3357-T2 |
For amplify high frequency and low noise. |
NEC |
| 1203 |
2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1204 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 1205 |
2SC3423 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1206 |
2SC3444 |
FOR LOW FREQUENCY POWER AMPLFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 1207 |
2SC3495 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1208 |
2SC3526(H) |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1209 |
2SC3526H |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1210 |
2SC3576 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1211 |
2SC3624 |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 1212 |
2SC3624A |
AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 1213 |
2SC3650 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1214 |
2SC3651 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1215 |
2SC3652 |
SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER |
Hitachi Semiconductor |
| 1216 |
2SC3661 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1217 |
2SC3663 |
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION |
NEC |
| 1218 |
2SC3663-L |
For amplify high frequency and low noise. |
NEC |
| 1219 |
2SC3663-T1B |
For amplify high frequency and low noise. |
NEC |
| 1220 |
2SC3663-T2B |
For amplify high frequency and low noise. |
NEC |
| 1221 |
2SC367 |
Low Frequency Medium Power Transistor |
TOSHIBA |
| 1222 |
2SC368 |
Low Frequency Low-Noise, Low Level Transistor |
TOSHIBA |
| 1223 |
2SC3689 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
| 1224 |
2SC369 |
Low Frequency Low-Noise Transistor |
TOSHIBA |
| 1225 |
2SC370 |
Radio Frequency Transistor specification table |
TOSHIBA |
| 1226 |
2SC370 |
Low Frequency Small-Signal Transistor |
TOSHIBA |
| 1227 |
2SC370 |
High-Frequency Transistor SW BAND |
TOSHIBA |
| 1228 |
2SC370 |
High-Frequency Transistor BC BAND |
TOSHIBA |
| 1229 |
2SC3704 |
Small-signal device - Small-signal transistor - High-Frequency for Tuners |
Panasonic |
| 1230 |
2SC3707 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
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