| No. |
Part Name |
Description |
Manufacturer |
| 1201 |
1S770R |
Mobile alternator diode |
TOSHIBA |
| 1202 |
1S777 |
Germanium rectifier - Tr TV Damper |
TOSHIBA |
| 1203 |
1S81 |
General-purpose detector diode |
TOSHIBA |
| 1204 |
1S82 |
General-purpose detector diode |
TOSHIBA |
| 1205 |
1S86 |
Variable capacitance diode |
TOSHIBA |
| 1206 |
1S87 |
General-purpose switching diode |
TOSHIBA |
| 1207 |
1S88 |
General-purpose switching diode |
TOSHIBA |
| 1208 |
1S89 |
General-purpose switching diode |
TOSHIBA |
| 1209 |
1S90 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1210 |
1S91 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1211 |
1S92 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1212 |
1S93 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1213 |
1S94 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1214 |
1S95 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1215 |
1S96 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1216 |
1S97 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1217 |
1S98 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1218 |
1S99 |
General-Purpose silicon rectifier 0.3A |
TOSHIBA |
| 1219 |
1SS104 |
SILICON PLANAR TYPE DIODE |
TOSHIBA |
| 1220 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 1221 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1222 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1223 |
1SS187 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1224 |
1SS190 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1225 |
1SS193 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1226 |
1SS196 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1227 |
1SS200 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1228 |
1SS201 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1229 |
1SS226 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 1230 |
1SS239 |
Silicon epitaxial schottky barrier type diode, marking S1 |
TOSHIBA |
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