| No. |
Part Name |
Description |
Manufacturer |
| 12091 |
HN1L03FU |
Field Effect Transistor Silicon N-P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
TOSHIBA |
| 12092 |
HN1V01H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 12093 |
HN1V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 12094 |
HN2A01FU |
Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 12095 |
HN2C01FU |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 12096 |
HN2C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12097 |
HN2C12FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12098 |
HN2D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 12099 |
HN2D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 12100 |
HN2D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 12101 |
HN2S01F |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 12102 |
HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application |
TOSHIBA |
| 12103 |
HN2V02H |
Variable Capacitance Diode AM Radio Band Tuning Applications |
TOSHIBA |
| 12104 |
HN327 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12105 |
HN328 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12106 |
HN337 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12107 |
HN338 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12108 |
HN3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12109 |
HN3904 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12110 |
HN3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12111 |
HN3906 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 12112 |
HN3B01F |
PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 12113 |
HN3B02FU |
Transistor Silicon PNP�NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications |
TOSHIBA |
| 12114 |
HN3C10FE |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12115 |
HN3C10FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12116 |
HN3C12 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 12117 |
HN3C14 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 12118 |
HN3C14FT |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 12119 |
HN4B101J |
Power transistor for high-speed switching applications |
TOSHIBA |
| 12120 |
HN4B102J |
Power transistor for high-speed switching applications |
TOSHIBA |
| | | |
