| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AHP2812S |
66W -120W Total Output Power 28 Vin +12 Vout Single DC-DC Standard Converter in an AHP Package. |
International Rectifier |
| 122 |
AHP2815D |
66W -120W Total Output Power 28 Vin +/-15 Vout Dual DC-DC Standard Converter in an AHP Package. |
International Rectifier |
| 123 |
AHP2815S |
66W -120W Total Output Power 28 Vin +15 Vout Single DC-DC Standard Converter in an AHP Package. |
International Rectifier |
| 124 |
AHP2828S |
66W -120W Total Output Power 28 Vin +28 Vout Single DC-DC Standard Converter in an AHP Package. |
International Rectifier |
| 125 |
AM79C873KCW |
NetPHY -1 10/100 Mbps Ethernet Physical Layer Single-Chip Transceiver with 100BASE-FX Support |
Advanced Micro Devices |
| 126 |
AT89C52-12DM_883 |
12MHz; V(cc): -1 to +7V; 15mA; 8-bit microcontroller with 8Kbytes flash |
Atmel |
| 127 |
AT89C52-12LM_883 |
12MHz; V(cc): -1 to +7V; 15mA; 8-bit microcontroller with 8Kbytes flash |
Atmel |
| 128 |
ATP301 |
P-Channel Power MOSFET, -100V, -28A, 75mOhm, ATPAK |
ON Semiconductor |
| 129 |
AUIRF5210S |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 130 |
AUIRF5210STRR |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 131 |
AUIRF6215 |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 132 |
AUIRF6215S |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 133 |
AUIRF6215STRR |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 134 |
AUIRF6218L |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a TO-262 Package |
International Rectifier |
| 135 |
AUIRF6218S |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 136 |
AUIRF6218STRL |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 137 |
AUIRF6218STRR |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D2-Pak Package |
International Rectifier |
| 138 |
AUIRF9540N |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package |
International Rectifier |
| 139 |
AUIRFR5410 |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 140 |
AUIRFR5410TR |
Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 141 |
AUIRFR6215 |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 142 |
AUIRFR6215TR |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 143 |
AUIRFR6215TRL |
Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 144 |
BBS3002 |
P-Channel Power MOSFET -60V, -100A, 5.8mOhm, TO-263-2L/TO-263 |
ON Semiconductor |
| 145 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 146 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 147 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 148 |
BC556 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 149 |
BC557 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
| 150 |
BC558 |
Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. |
USHA India LTD |
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