| No. |
Part Name |
Description |
Manufacturer |
| 121 |
ASM4SSTVF16857-48TR |
2.3 V -2.7 V, DDR 14-bit registered buffer |
Alliance Semiconductor |
| 122 |
ASM4SSTVF16857-48TT |
2.3 V -2.7 V, DDR 14-bit registered buffer |
Alliance Semiconductor |
| 123 |
ASM4SSTVF16857-48VR |
2.3 V -2.7 V, DDR 14-bit registered buffer |
Alliance Semiconductor |
| 124 |
ASM4SSTVF16857-48VT |
2.3 V -2.7 V, DDR 14-bit registered buffer |
Alliance Semiconductor |
| 125 |
ASM4SSTVF16859-56QR |
2.3 V -2.7 V, DDR 13-bit to 26-bit registered buffer |
Alliance Semiconductor |
| 126 |
ASM4SSTVF16859-56QT |
2.3 V -2.7 V, DDR 13-bit to 26-bit registered buffer |
Alliance Semiconductor |
| 127 |
ASM4SSTVF16859-64TR |
2.3 V -2.7 V, DDR 13-bit to 26-bit registered buffer |
Alliance Semiconductor |
| 128 |
ASM4SSTVF16859-64TT |
2.3 V -2.7 V, DDR 13-bit to 26-bit registered buffer |
Alliance Semiconductor |
| 129 |
ASM4SSTVF32852-114BR |
2.3 V -2.7 V, DDR 24-bit to 48-bit registered buffer |
Alliance Semiconductor |
| 130 |
ASM4SSTVF32852-114BT |
2.3 V -2.7 V, DDR 24-bit to 48-bit registered buffer |
Alliance Semiconductor |
| 131 |
AT22V10-15DM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; V�� power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 132 |
AT22V10-15GM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 133 |
AT22V10-15JM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 134 |
AT22V10-15LM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 135 |
AT22V10-15NM_883 |
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 136 |
AT22V10-20DM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 137 |
AT22V10-20GM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 138 |
AT22V10-20LM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 139 |
AT22V10-20NM_883 |
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 140 |
AT22V10-25DM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 141 |
AT22V10-25GM_883 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 142 |
AT22V10-25LM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 143 |
AT22V10-25NM_833 |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 144 |
ATP301 |
P-Channel Power MOSFET, -100V, -28A, 75mOhm, ATPAK |
ON Semiconductor |
| 145 |
AUIRF7207Q |
Automotive Q101 -20V Single P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 146 |
AUIRF7207QTR |
Automotive Q101 -20V Single P-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 147 |
AUIRF7304Q |
Automotive Q101 -20V Single N-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 148 |
AUIRF7304QTR |
Automotive Q101 -20V Single N-Channel HEXFET Power MOSFET in a SO-8 Package |
International Rectifier |
| 149 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 150 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| | | |
