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Datasheets for 1 G

Datasheets found :: 602
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 ADG936BRU-R-REEL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
122 ADG936BRU-REEL Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
123 ADG936BRU-REEL7 Wideband 4 GHz, 36 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, Dual SPDT Analog Devices
124 AT84AD001 Dual 8-bit 1 Gsps ADC Atmel
125 AT84AD001B Dual 8-bit 1 Gsps ADC Provides 1 Gsps sampling per channel or 2 Gsps sampling from one channel (interleaving mode) and integrates ... Atmel
126 AT84AD001B Dual 8-bit 1 Gsps ADC Provides 1 Gsps sampling per channel or 2 Gsps sampling from one channel (interleaving mode) and integrates ... Atmel
127 AT84AD001BCTD Dual 8-bit 1 Gsps ADC Atmel
128 AT84AD001BITD Dual 8-bit 1 Gsps ADC Atmel
129 AT84AD001TD-EB Dual 8-bit 1 Gsps ADC Atmel
130 AT84AD004 Dual 8-bit 500 Msps ADC Provides 500 Msps sampling per channel or 1 Gsps sampling from one channel (interleaving mode) and integrates ... Atmel
131 AT84XAD001BTD Dual 8-bit 1 Gsps ADC Atmel
132 BAY66 Silicon power varactor diode for frequency multipliers up to 1 GHz VALVO
133 BF1012W SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) Siemens
134 BF2000W Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
135 BF547 NPN 1 GHz wideband transistor Philips
136 BF547W NPN 1 GHz wideband transistor Philips
137 BF747 NPN 1 GHz wideband transistor Philips
138 BF998 Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) Siemens
139 BFQ17 NPN 1 GHz wideband transistor Philips
140 BFQ29 NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) Siemens
141 BFQ29P NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.) Siemens
142 BFR93P NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) Siemens
143 BFS17 NPN 1 GHz wideband transistor Philips
144 BFS17W NPN 1 GHz wideband transistor NXP Semiconductors
145 BFS17W NPN 1 GHz wideband transistor Philips
146 BFS17W. RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA Infineon
147 BFT93 PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) Siemens
148 D150D 2 AND-NOR gates with 2 x 2 inputs each, 1 gate with expansion the entrance, possibly equivalent SN7450N RFT
149 E150D 2 AND-NOR gates with 2 x 2 inputs each, 1 gate with expansion the entrance, possibly equivalent SN8450N RFT
150 ET4000 28 x 1 GBit Agere Systems


Datasheets found :: 602
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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