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Datasheets for 1.

Datasheets found :: 24780
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No. Part Name Description Manufacturer
121 1110UFD 1000 V single phase bridge 1.4-1.5 A forward current, 70 ns recovery time Voltage Multipliers
122 1110UFE 1000 V single phase bridge 1.4-1.5 A forward current, 70 ns recovery time Voltage Multipliers
123 1110UFF 1000 V single phase bridge 1.4-1.5 A forward current, 70 ns recovery time Voltage Multipliers
124 11DF4 Diode Schottky 30V 1.1A 2-Pin DO-204AL Box New Jersey Semiconductor
125 11DQ03 30V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
126 11DQ03 Diode Schottky 30V 1.1A 2-Pin DO-204AL Box New Jersey Semiconductor
127 11DQ03TR 30V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
128 11DQ04 40V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
129 11DQ04 Diode Schottky 40V 1.1A 2-Pin DO-204AL Box New Jersey Semiconductor
130 11DQ04TR 40V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
131 11DQ05 50V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
132 11DQ05 Diode Schottky 50V 1.1A 2-Pin DO-204AL Box New Jersey Semiconductor
133 11DQ05TR 50V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
134 11DQ06 60V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
135 11DQ06 Diode Schottky 60V 1.1A 2-Pin DO-204AL Box New Jersey Semiconductor
136 11DQ06TR 60V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
137 11DQ09 90V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
138 11DQ09TR 90V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
139 11DQ10 100V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
140 11DQ10 Diode Schottky 100V 1.1A 2-Pin DO-204AL Box New Jersey Semiconductor
141 11DQ10TR 100V 1.1A Schottky Discrete Diode in a DO-204AL package International Rectifier
142 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Serial Presence Detec Samsung Electronic
143 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
144 128MX72 SDRAM (INTEL 1.2 VER BASE) 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet Samsung Electronic
145 1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
146 15KP180 Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. Panjit International Inc
147 15KP180A Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. Panjit International Inc
148 15KP180C Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/253.8 V @ It = 1.0 mA. Ir = 5 uA. Vc = 322 V @ Ipp = 47 A. Panjit International Inc
149 15KP180CA Glass passivated junction transient voltage suppressor. Vrwm = 180 V. Vbr(min/max) = 198/230.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 292 V @ Ipp = 51 A. Panjit International Inc
150 15KP190 Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. Panjit International Inc


Datasheets found :: 24780
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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