| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 122 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 123 |
2N5416 |
1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 124 |
2N5659 |
HIGH SPEED NPN TRANSISTOR 120 VOLTS |
Solid State Devices Inc |
| 125 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 126 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 127 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 128 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 129 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
| 130 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 131 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 132 |
2N708 |
0.360W General Purpose NPN Metal Can Transistor. 15V Vceo, 0.200A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 133 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
| 134 |
2SC3928A |
200mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC3928 |
Isahaya Electronics Corporation |
| 135 |
2SC4155A |
150mW SMD NPN transistor, maximum rating: 50V Vceo, 200mA Ic, 120 to 820 hFE. Improve on 2SC4155 |
Isahaya Electronics Corporation |
| 136 |
2V075 |
Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 120 V @ 1mA DC test current. |
NTE Electronics |
| 137 |
3EZ120D |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 138 |
3EZ120D1 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 139 |
3EZ120D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 1% tolerance. |
Motorola |
| 140 |
3EZ120D10 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 141 |
3EZ120D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 10% tolerance. |
Motorola |
| 142 |
3EZ120D2 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 143 |
3EZ120D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. 2% tolerance. |
Motorola |
| 144 |
3EZ120D3 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 145 |
3EZ120D4 |
3 W, silicon zener diode. Nominal voltage 120 V, current 6.3 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 146 |
3EZ120D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 120 V. |
Motorola |
| 147 |
5962-02548 |
66W -120W Total Output Power 120 Vin +3.3 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02548 |
International Rectifier |
| 148 |
5962-02549 |
66W -120W Total Output Power 120 Vin +8 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02549 |
International Rectifier |
| 149 |
5962-02550 |
66W -120W Total Output Power 120 Vin +9 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02550 |
International Rectifier |
| 150 |
5962-02551 |
66W -120W Total Output Power 120 Vin +12 Vout Single DC-DC Standard Converter in an AFL Package. DLA Number 5962-02551 |
International Rectifier |
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