| No. |
Part Name |
Description |
Manufacturer |
| 121 |
15KPA160A |
Diode TVS Single Uni-Dir 160V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 122 |
15KPA160C |
Diode TVS Single Bi-Dir 160V 15KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 123 |
15KPA160CA |
Diode TVS Single Bi-Dir 160V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 124 |
15KPA16A |
Diode TVS Single Uni-Dir 160V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 125 |
15KPA16C |
Diode TVS Single Uni-Dir 160V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 126 |
15KPA16CA |
Diode TVS Single Uni-Dir 160V 15KW 2-Pin Case P600 Tape and Ammo |
New Jersey Semiconductor |
| 127 |
1600EXD22 |
Silicon alloy-diffused junction rectifier 2500V 1600A |
TOSHIBA |
| 128 |
1600FD21 |
Silicon alloy-diffused junction rectifier 300V 1600A |
TOSHIBA |
| 129 |
1600FXD22 |
Silicon alloy-diffused junction rectifier 3000V 1600A |
TOSHIBA |
| 130 |
160CMQ035 |
35V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package |
International Rectifier |
| 131 |
160CMQ040 |
40V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package |
International Rectifier |
| 132 |
160CMQ045 |
45V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package |
International Rectifier |
| 133 |
160CNQ035 |
35V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package |
International Rectifier |
| 134 |
160CNQ040 |
40V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package |
International Rectifier |
| 135 |
160CNQ045 |
45V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package |
International Rectifier |
| 136 |
160PFT160 |
V(rrm/drm): 1600V; 600A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 137 |
1617-35 |
35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz |
GHz Technology |
| 138 |
1617AB15 |
15 Watts PEP, 26 Volts, Class AB Linear 1600 - 1700 MHz |
GHz Technology |
| 139 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 140 |
1617AB5 |
5 W, 26 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
| 141 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
| 142 |
161CMQ035 |
35V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package |
International Rectifier |
| 143 |
161CMQ040 |
40V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package |
International Rectifier |
| 144 |
161CMQ045 |
45V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package |
International Rectifier |
| 145 |
161CNQ035 |
35V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package |
International Rectifier |
| 146 |
161CNQ040 |
40V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package |
International Rectifier |
| 147 |
161CNQ045 |
45V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package |
International Rectifier |
| 148 |
162CMQ030 |
30V 160A Schottky Common Cathode Diode in a TO-249AA (Isolated) package |
International Rectifier |
| 149 |
162CMQ030 |
Diode Schottky 30V 160A |
New Jersey Semiconductor |
| 150 |
162CNQ030 |
30V 160A Schottky Common Cathode Diode in a TO-249AA Non-Isolated package |
International Rectifier |
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