| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N5242A |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 122 |
1N5242C |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 123 |
1N5242D |
12 V, 20 mA, zener diode |
Leshan Radio Company |
| 124 |
1N5250 |
500mW, 20 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 125 |
1N5250AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 20 V. Tolerance +-10%. |
Microsemi |
| 126 |
1N5250BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 20 V. Tolerance +-5%. |
Microsemi |
| 127 |
1N5250UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 20 V. |
Microsemi |
| 128 |
1N5370B |
56 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 129 |
1N5371B |
60 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 130 |
1N5372B |
62 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 131 |
1N5373B |
68 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 132 |
1N5374B |
75 V, 20 mA, 5 W glass passivated zener diode |
Fagor |
| 133 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 134 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 135 |
1N5518D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 136 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 137 |
1N5519B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 138 |
1N5520A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 139 |
1N5520B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.9 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 140 |
1N5521A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 141 |
1N5521B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 142 |
1N5521D |
0.4 W, low voltage avalanche diode. Nominal zener voltage 4.3 V. Test current 20 mAdc. +-1% tolerance. |
Jinan Gude Electronic Device |
| 143 |
1N5803 |
RECTIFIERS HIGH EFFICIENCY/ ESP/ 2.5 AMP TO 20 AMP |
Microsemi |
| 144 |
1N5805 |
RECTIFIERS HIGH EFFICIENCY/ ESP/ 2.5 AMP TO 20 AMP |
Microsemi |
| 145 |
1N5812 |
50 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
| 146 |
1N5814 |
100 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
| 147 |
1N5816 |
150 V, 20 A hyper fast recovery rectifier |
Solid State Devices Inc |
| 148 |
1N5817 |
SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40 Volts, Forward Current - 1.0Ampere |
Chenyi Electronics |
| 149 |
1N5817 |
1 Amp Schottky Barrier Rectifier 20 to 40 Volts |
Micro Commercial Components |
| 150 |
1N5817 |
1 AMPERE SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 40 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| | | |
