| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
| 122 |
2N6121 |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 123 |
2N6121A |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 124 |
2N6121B |
Trans GP BJT NPN 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 125 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 126 |
2N6124 |
Trans GP BJT PNP 45V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
| 127 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 128 |
2N6708 |
0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
| 129 |
2N930 |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, - 600 hFE. |
Continental Device India Limited |
| 130 |
2N930 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 131 |
2N930A |
0.500W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.030A Ic, 100 - 600 hFE. |
Continental Device India Limited |
| 132 |
2N935 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 133 |
2N936 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 134 |
2N937 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 135 |
2N938 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 136 |
2N939 |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 137 |
2N939A |
Trans GP BJT NPN 45V 0.03A 3-Pin TO-18 |
New Jersey Semiconductor |
| 138 |
30CLJCQ045 |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Ceramic Lid SMD-0.5 package DLA Number 1N7064CCU3C |
International Rectifier |
| 139 |
30CLJCQ045SCS |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Ceramic Lid SMD-0.5 package DLA Number 1N7064CCU3C |
International Rectifier |
| 140 |
30CLJQ045 |
30A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package |
International Rectifier |
| 141 |
30CLJQ045SCS |
30A 45V Hi-Rel Schottky Common Cathode Diode in a Metallic Lid SMD-0.5 package DLA Number 1N7064CCU3 |
International Rectifier |
| 142 |
30FQ045 |
V(rrm): 45V; 30A schottky power rectifier |
International Rectifier |
| 143 |
30FQ045 |
Diode Schottky 45V 30A 2-Pin DO-4 |
New Jersey Semiconductor |
| 144 |
30KP45 |
Diode TVS Single Uni-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 145 |
30KP45A |
Diode TVS Single Uni-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 146 |
30KP45C |
Diode TVS Single Bi-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 147 |
30KP45CA |
Diode TVS Single Bi-Dir 45V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 148 |
30KPA45 |
Diode TVS Single Uni-Dir 45V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 149 |
30KPA45A |
Diode TVS Single Uni-Dir 45V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 150 |
30KPA45C |
Diode TVS Single Bi-Dir 45V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
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