No. |
Part Name |
Description |
Manufacturer |
121 |
KS0676 |
6 BIT 480 CHANNEL TFT-LCD SOURCE DRIVER |
Samsung Electronic |
122 |
LCD-640X480A |
640 x 480 Dots Graphic LCD |
Vishay |
123 |
LM8V311 |
Passive Matrix Color LCD Module (640 x 480 dots) |
SHARP |
124 |
MAX4174ANEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 8, 1+ (Rf/Dg) noninverting gain 9, -3dB BW 480kHz. |
MAXIM - Dallas Semiconductor |
125 |
MAX4175ANEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 8, 1+ (Rf/Dg) noninverting gain 9, -3dB BW 480kHz. |
MAXIM - Dallas Semiconductor |
126 |
MAX4274ANESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 8, 1+ (Rf/Dg) noninverting gain 9, -3dB BW 480kHz. |
MAXIM - Dallas Semiconductor |
127 |
MAX4274ANEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 8, 1+ (Rf/Dg) noninverting gain 9, -3dB BW 480kHz. |
MAXIM - Dallas Semiconductor |
128 |
MAX4275ANESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 8, 1+ (Rf/Dg) noninverting gain 9, -3dB BW 480kHz. |
MAXIM - Dallas Semiconductor |
129 |
MAX4275ANEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 8, 1+ (Rf/Dg) noninverting gain 9, -3dB BW 480kHz. |
MAXIM - Dallas Semiconductor |
130 |
NDL7540PA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
131 |
NDL7910P |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
132 |
NL6448AC33-18 |
26 cm 10.4 inches, 640 x 480 pixels, 262144 colors, Luminance adjustable, Non anti-glare panel |
NEC |
133 |
NL6448AC33-18A |
26 cm 10.4 inches, 640 x 480 pixels, 262144 colors, Luminance adjustable, Non anti-glare panel |
NEC |
134 |
NL6448AC33-29 |
26 cm 10.4 inches, 640 x 480 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Ultra Wide viewing angle |
NEC |
135 |
NL6448BC20-08 |
17 cm 6.5 type, 640 x 480 pixels 262144 colors, high luminance, wide viewing angle |
NEC |
136 |
NL6448BC33-31 |
26 cm 10.4 inches, 640 x 480 pixels, 262,144 colors, Incorporated two-lamp/Edge-light type backlight Wide viewing angle |
NEC |
137 |
NX7460LE |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
138 |
NX7460LE-BA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
139 |
NX7460LE-CA |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
140 |
NX7660JC |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
141 |
NX8501 |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
142 |
NX8561JD |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
143 |
NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
144 |
NX8563LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE |
NEC |
145 |
PMR670UPE |
20 V, 480 mA P-channel Trench MOSFET |
Nexperia |
146 |
PMR670UPE |
20 V, 480 mA P-channel Trench MOSFET |
NXP Semiconductors |
147 |
PTRA094808NF-V1 |
High Power RF LDMOS FET 480W, 48V, 859 - 960 MHz |
Wolfspeed |
148 |
RA201248 |
1200V, 4800A general purpose single diode |
Powerex Power Semiconductors |
149 |
RFHCS362F |
The rfHCS362G is a code hopping encoder designed for secure Remote Keyless Entry (RKE) systems combined with a 310MHz - 480MHz ASK/FSK transmitter. The HCS362 utilizes Microchip's patented KEELOQ® hopping technology, which incorporate |
Microchip |
150 |
RFHCS362G |
The rfHCS362G is a code hopping encoder designed for secure Remote Keyless Entry (RKE) systems combined with a 310MHz - 480MHz ASK transmitter. The HCS362 utilizes Microchip's patented KEELOQ® hopping technology, which incorporates hi |
Microchip |
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