| No. |
Part Name |
Description |
Manufacturer |
| 121 |
CF5003BC |
Quartz crystal oscillator IC, 43 to 55 MHz |
Nippon Precision Circuits Inc |
| 122 |
CF5003BD |
Quartz crystal oscillator IC, 55 to 70 MHz |
Nippon Precision Circuits Inc |
| 123 |
CFA1301 |
50.000W Power PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 200 hFE. Complementary CFC3280 |
Continental Device India Limited |
| 124 |
CFA1301R |
50.000W Power PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 110 hFE. Complementary CFC3280R |
Continental Device India Limited |
| 125 |
CFC3280 |
50.000W Power NPN Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 200 hFE. Complementary CFA1301 |
Continental Device India Limited |
| 126 |
CFC3280R |
50.000W Power NPN Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 110 hFE. Complementary CFA1301R |
Continental Device India Limited |
| 127 |
CM420855 |
SCR/Diode POW-R-BLOK�� Modules 55 Amperes/800 Volts |
Powerex Power Semiconductors |
| 128 |
CM421255 |
SCR/Diode POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
| 129 |
CM421655 |
SCR/Diode POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
| 130 |
CM430855 |
Dual SCR POW-R-BLOK�� Modules 55 Amperes/800 Volts |
Powerex Power Semiconductors |
| 131 |
CM431255 |
Dual SCR POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
| 132 |
CM431655 |
Dual SCR POW-R-BLOK�� Modules 55 Amperes/1200-1600 Volts |
Powerex Power Semiconductors |
| 133 |
CSA1943F |
90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 160 hFE. Complementary CSC5200F |
Continental Device India Limited |
| 134 |
CSA1943FR |
90.000W Darlington PNP Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 110 hFE. Complementary CSC5200FR |
Continental Device India Limited |
| 135 |
CSC5200F |
90.000W Power NPN Plastic Leaded Transistor. 160V Vceo, 12.000A Ic, 55 - 160 hFE. |
Continental Device India Limited |
| 136 |
CY62137CV33LL-55BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
| 137 |
CY62137CV33LL-55BVI |
Very high speed: 55 ns and 70 ns |
Cypress |
| 138 |
CY62137CV33LL-70BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
| 139 |
CY62137CVLL-70BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
| 140 |
CY62137CVSL-70BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
| 141 |
EN1789 |
N-Channel JFET, 40V, 55 to 95uA, 0.10mS, CP |
ON Semiconductor |
| 142 |
HUF75333G3 |
Power dissipation 111 W Transistor polarity N Channel Current Id cont. 56 A Pitch lead 5.45 mm Voltage Vds max 55 V Resistance Rds on 0.016 R Temperature current 25 ?C Temperature power 25 ?C |
Fairchild Semiconductor |
| 143 |
HYB514175BJ-55 |
256k x 16 Bit EDO DRAM 5 V 55 ns |
Infineon |
| 144 |
IRF6614TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
| 145 |
IRF6621TR1 |
Leaded A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
| 146 |
IRF6621TR1PBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
| 147 |
IRF6621TRPBF |
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 55 amperes. |
International Rectifier |
| 148 |
IRF6623TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
| 149 |
IRF6668 |
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes. |
International Rectifier |
| 150 |
IRF6668TR1PBF |
A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 55 amperes. |
International Rectifier |
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