Datasheets for 850

Datasheets found :: 186

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No.	Part Name	Description	Manufacturer
121	SGA-5289	DC-5000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ at 850 MHz	Stanford Microdevices
122	SGA-5386	DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31 dBm typ at 850 MHz	Stanford Microdevices
123	SGA-5389	DC-3200 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +31.5 dBm typ. at 850 MHz	Stanford Microdevices
124	SGA-5486	DC-2400 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz	Stanford Microdevices
125	SGA-5489	DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +30.8 dBm typ. at 850 MHz	Stanford Microdevices
126	SGA-5586	DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +32 dBm typ. at 850 MHz	Stanford Microdevices
127	SGA-5589	DC-4000 MHz, silicon germanium HBT cascadeable gain block. High output intercept: +33 dBm typ. at 850 MHz	Stanford Microdevices
128	SGA-6586	DC-2500 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +34.0 dBm typ. at 850 MHz	Stanford Microdevices
129	SGA-6589	DC-4000 MHz, silicon germanium HTB cascadeable gain block. High output intercept: +32.5 dBm typ. at 850 MHz	Stanford Microdevices
130	SGA-7489	DC-3000 MHz 5V silicon germanium HBT cascdeable gain block. High output intercept; +36 dBm typ. at 850 MHz.	Stanford Microdevices
131	SGSF461	125W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS	SGS Thomson Microelectronics
132	SGSF561	150W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS	SGS Thomson Microelectronics
133	SGSIF461	65W; V(ces): 850V; V(ceo): 400V; V(ebo): 7V; I(c): 15A; fast switch hollow-emitter NPN transistor. For SMPS	SGS Thomson Microelectronics
134	SNA-586	DC-5 GNz cascadable GaAs HBT MMIC amplifier. High output IP3: 32.5 dBm at 850 MHz. Devices per reel 1000. Reel size 7	Stanford Microdevices
135	SPL2F85	Laser TO220 850 nm	Infineon
136	SPL2Y85	Laser TO220 850 nm	Infineon
137	SPLCG85	Laser C-Mount 850 nm	Infineon
138	ST1CC40	3 A, 850 KHz, MONOLITHIC SYNCHRONOUS STEP-DOWN CONSTANT CURRENT LED DRIVER	ST Microelectronics
139	ST1CC40DR	3 A, 850 KHz, MONOLITHIC SYNCHRONOUS STEP-DOWN CONSTANT CURRENT LED DRIVER	ST Microelectronics
140	ST1CC40PUR	3 A, 850 KHz, MONOLITHIC SYNCHRONOUS STEP-DOWN CONSTANT CURRENT LED DRIVER	ST Microelectronics
141	STEVAL-ISA107V1	4 A 850 kHz fixed-frequency PWM synchronous step-down demonstration board based on ST1S41IPHR (SO-8 ePad) with enable	ST Microelectronics
142	STEVAL-ISA108V1	4 A, 850 kHz fixed-frequency PWM synchronous step-down demostration board based on the ST1S41 in a VFQFPN package	ST Microelectronics
143	STF8NK85Z	N-CHANNEL 850V -1.1Ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET	ST Microelectronics
144	STP8NK85Z	N-CHANNEL 850V -1.1Ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET	ST Microelectronics
145	STW23N85K5	N-channel 850 V, 0.2 Ohm typ., 19 A Zener-protected SuperMESH(TM) V Power MOSFET in TO-247 package	ST Microelectronics
146	SXL-316-BLK	800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 100/TRAY.	Stanford Microdevices
147	SXL-316-TR2	800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: +52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13	Stanford Microdevices
148	TCXO2	Temperature compensated quartz oscillator 90 850	Tesla Elektronicke
149	TQ1422	GSM 850/900 DCS/PCS H3-Filter TQM7M4102 PA to Transceiver Interface Module	TriQuint Semiconductor
150	TRANSCEIVERSFF2X5GB	Transceivers by Form-factor MSA - Multimode 850nm VCSEL TRX, (AC/AC coupling), 1.25 GBit/s LC, 2x5, 3.3V	Infineon

Datasheets found :: 186

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