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Datasheets for AND D

Datasheets found :: 11082
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No. Part Name Description Manufacturer
121 2N3494 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
122 2N3495 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
123 2N3496 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
124 2N3497 PNP silicon annular Star transistor for high voltage switching and DC to VHF amplifier applications Motorola
125 2N3553 Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
126 2N3553 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
127 2N3632 Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages AEG-TELEFUNKEN
128 2N3632 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
129 2N3664 NPN silicon transistor for power amplifier and driver applications to 500MHz Motorola
130 2N3722 NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications Motorola
131 2N3723 NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications Motorola
132 2N3866 Silicon NPN epitaxial planar transistor for VHF and UHF power stages, oscillator stages and driver stages AEG-TELEFUNKEN
133 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
134 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
135 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
136 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
137 2N3961 NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz Motorola
138 2N4072 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
139 2N4073 NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications Motorola
140 2N4234 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
141 2N4235 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
142 2N4236 PNP silicon power transistor ideal for use as drivers, switches, and direct replacement of germanium medium-power devices Motorola
143 2N4427 Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits AEG-TELEFUNKEN
144 2N718A NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications Motorola
145 2N956 NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications Motorola
146 2SA1837 TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
147 2SA1899 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
148 2SA1930 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
149 2SA1932 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
150 2SC3665 TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS TOSHIBA


Datasheets found :: 11082
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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