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Datasheets for AND P

Datasheets found :: 4762
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 2N5168R Pressfit and pressfit-stud thyristors Motorola
122 2N5169 Pressfit and pressfit-stud thyristors Motorola
123 2N5169R Pressfit and pressfit-stud thyristors Motorola
124 2N5170 Pressfit and pressfit-stud thyristors Motorola
125 2N5170R Pressfit and pressfit-stud thyristors Motorola
126 2N5171 Pressfit and pressfit-stud thyristors Motorola
127 2N5171R Pressfit and pressfit-stud thyristors Motorola
128 2N5447 Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits AEG-TELEFUNKEN
129 2N5448 Silicon PNP epitaxial planar transistors for driver stages and power stages in AF amplifier circuits AEG-TELEFUNKEN
130 2N5449 Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits AEG-TELEFUNKEN
131 2N5450 Silicon NPN epitaxial planar transistors for driver stages and power stages in AF amplifier circuits AEG-TELEFUNKEN
132 2N6106 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
133 2N6107 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
134 2N6108 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
135 2N6109 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
136 2N6110 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
137 2N6111 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
138 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
139 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
140 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
141 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
142 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
143 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
144 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
145 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
146 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
147 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
148 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
149 2N6293 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
150 2N6473 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation


Datasheets found :: 4762
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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