| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AEY30B |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 122 |
AEY30C |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 123 |
AEY30D |
Tunnel diodes for low-noise amplifiers and fast switches for the sub-nanosecond range, datasheet in german language |
Siemens |
| 124 |
AN656 |
POWER TRANSISTORS - DEVICES AND DATASHEETS |
SGS Thomson Microelectronics |
| 125 |
ATF2500C-15JC |
ATF2500C CPLD Family Datasheet |
Atmel |
| 126 |
ATF2500C-15JI |
ATF2500C CPLD Family Datasheet |
Atmel |
| 127 |
ATF2500C-20JI |
ATF2500C CPLD Family Datasheet |
Atmel |
| 128 |
ATF2500C-20PC |
ATF2500C CPLD Family Datasheet |
Atmel |
| 129 |
ATF2500C-20PI |
ATF2500C CPLD Family Datasheet |
Atmel |
| 130 |
ATLAS |
STPC ATLAS DATASHEET / X86 CORE PC COMPATIBLE SYSTEM-ON-CHIP FOR TERMINALS |
ST Microelectronics |
| 131 |
BBY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 132 |
BBY25 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 133 |
BBY26 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 134 |
BBY27 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 135 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 136 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 137 |
BGY12 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 138 |
BGY12A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 139 |
BGY12B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 140 |
BGY13 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 141 |
BGY13A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 142 |
BGY13B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 143 |
BGY14 |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 144 |
BGY14A |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 145 |
BGY14B |
Avalanche transit time diodes for the C and X bands, datasheet in german language |
Siemens |
| 146 |
BXY10 |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 147 |
BXY10A |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 148 |
BXY10B |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 149 |
BXY10C |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
| 150 |
BXY10D |
Storage varactors for low and medium input power, datasheet in german language |
Siemens |
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