| No. |
Part Name |
Description |
Manufacturer |
| 121 |
TCD1252AP |
CCD LINEAR IMAGE SENSOR The TCD1252AP is a high sensitive and low dark current 2700 - elements linear image sensor. |
TOSHIBA |
| 122 |
TCD1304AP |
CCD LINEAR IMAGE SENSOR The TCD1252AP is a high sensitive and low dark current 3648 - elements linear image sensor. |
TOSHIBA |
| 123 |
TCD1305P |
CCD LINEAR IMAGE SENSOR The TCD1252AP is a high sensitive and low dark current 3648 - elements linear image sensor. |
TOSHIBA |
| 124 |
TCD1501D |
CCD LINEAR IMAGE SENSOR The TCD1501D which includes sample .and .hold circuit is a high sensitive and low dark current 5000 elements CCD image sensor. |
TOSHIBA |
| 125 |
TCD1503D |
CCD LINEAR IMAGE SENSOR The TCD1503D is a high sensitive and low dark current 5000 elements CCD image sensor. |
TOSHIBA |
| 126 |
TCD1704C |
The TCD1704C is a high sensitive and low dark current 7500 elements CCD linear image sensor. |
TOSHIBA |
| 127 |
TCD1705D |
The TCD1705D is a high sensitive and low dark current 7450 elements CCD LINEAR IMAGE SENSOR |
TOSHIBA |
| 128 |
TCD2300C |
The TCD2301C which includes sample .and .hold circuit and clamp circuit is a high sensitive and low dark current 3648 elements x 3 lines CCD color image sensor. |
TOSHIBA |
| 129 |
TCD2301C |
The TCD2301C which includes sample .and .hold circuit and clamp circuit is a high sensitive and low dark current 3648 elements x 3 lines CCD color image sensor. |
TOSHIBA |
| 130 |
TCD2503C |
The TCD2503C is a high sensitive and low dark current 5000 elements � 3 line CCD color image sensor |
TOSHIBA |
| 131 |
TCD2557D |
The TCD2557D is a high sensitive and low dark current 5340 elements � 3 line CCD color image sensor which includes CCD drive circuit, clamp circuit and sample and hold circuit. |
TOSHIBA |
| 132 |
TCD2558D |
The TCD2558D is a high sensitive and low dark current 5340 elements � 3 line CCD color image sensor which includes CCD drive circuit, clamp circuit. |
TOSHIBA |
| 133 |
TCD2560D |
The TCD2560D is a high sensitive and low dark current 5400 elements � 3 line CCD color image sensor which includes CCD drive circuit and clamp circuit. |
TOSHIBA |
| 134 |
TCD2561D |
The TCD2561D is a high sensitive and low dark current 5340 elements � 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. |
TOSHIBA |
| 135 |
TCD2700C |
The TCD2700C is a high sensitive and low dark current 7500 elements � 3 line CCD color image sensor. |
TOSHIBA |
| 136 |
TCD2701C |
The TCD2701C is a high sensitive and low dark current 7500 elements � 3 line CCD color image sensor. |
TOSHIBA |
| 137 |
TCD2704D |
The TCD2704D is a high sensitive and low dark current 7500 elements � 4 line CCD color image sensor which includes CCD drive circuit, clamp circuit. |
TOSHIBA |
| 138 |
TCD2903D |
The TCD2903D is a high sensitive and low dark current 10680 elements x 3 line CCD color image sensor which includes CCD drive circuit and clamp circuit. |
TOSHIBA |
| 139 |
TCD2905D |
The TCD2905D is a high sensitive and low dark current 5400 elements � 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for scanner. |
TOSHIBA |
| 140 |
TCD2950D |
The TCD2950D is a high sensitive and low dark current 10680 elements � 6 line CCD color image sensor which includes CCD drive circuit and clamp circuit. The sensor is designed for scanner. |
TOSHIBA |
| 141 |
UPA800T |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 142 |
UPA800T-T1 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 143 |
UPA802T |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 144 |
UPA802T-T1 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 145 |
UPA803 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 146 |
UPA803T |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 147 |
UPA803T-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 148 |
UPA805 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 149 |
UPA805T |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
| 150 |
UPA805T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD |
NEC |
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