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Datasheets for EMITTER

Datasheets found :: 1125
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No. Part Name Description Manufacturer
121 46101 1 W, 28 V, 960 MHz, UHF emitter transistor Acrian
122 46104 4 W, 28 V, 1000 MHz, UHF emitter transistor Acrian
123 46104-2 4 W, 28 V, 1000 MHz, UHF emitter transistor Acrian
124 46110 10 W, 28 V, 1000 MHz, UHF emitter transistor Acrian
125 46110-2 10 W, 28 V, 1000 MHz, UHF emitter transistor Acrian
126 46120 20 W, 28 V, 1000 MHz, UHF emitter transistor Acrian
127 46120-2 20 W, 28 V, 1000 MHz, UHF emitter transistor Acrian
128 80143 1 W, 15 V, 2300 MHz common emitter transistor GHz Technology
129 AT-31625 4.8 V NPN Common Emitter Medium Power Output Transistor Agilent (Hewlett-Packard)
130 AT-31625-BLK 4.8 V NPN Common Emitter Medium Power Output Transistor Agilent (Hewlett-Packard)
131 AT-31625-TR1 4.8 V NPN Common Emitter Medium Power Output Transistor Agilent (Hewlett-Packard)
132 AT-33225 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Agilent (Hewlett-Packard)
133 AT-33225-BLK 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Agilent (Hewlett-Packard)
134 AT-33225-TR1 4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones Agilent (Hewlett-Packard)
135 AT-36408 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones Agilent (Hewlett-Packard)
136 AT-36408-BLK 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones Agilent (Hewlett-Packard)
137 AT-36408-TR1 4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones Agilent (Hewlett-Packard)
138 AT-38086 4.8 V NPN Silicon Bipolar Common Emitter Transistor Agilent (Hewlett-Packard)
139 AT-38086-BLK 4.8 V NPN Silicon Bipolar Common Emitter Transistor Agilent (Hewlett-Packard)
140 AT-38086-TR1 4.8 V NPN Silicon Bipolar Common Emitter Transistor Agilent (Hewlett-Packard)
141 BC237 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
142 BC238 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
143 BC239 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
144 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
145 BC308 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
146 BC309 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
147 BC327 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. USHA India LTD
148 BC337 Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current USHA India LTD
149 BF550 PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) Siemens
150 BF599 NPN Silicon RF Transistor (Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion) Siemens


Datasheets found :: 1125
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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