| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N4195 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 122 |
2N4196 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 123 |
2N4197 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 124 |
2N4198 |
Multi-purpose silicon controlled rectifier suited for industrial, consumer, and military applications |
Motorola |
| 125 |
2N4427 |
Silicon NPN epitaxial planar transistor for input stages and driver stages in VHF amplifier circuits |
AEG-TELEFUNKEN |
| 126 |
2N456A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 127 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 128 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
| 129 |
2N706 |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 130 |
2N706A |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 131 |
2N706B |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 132 |
2SA1090 |
Silicon PNP epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 133 |
2SC1380 |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 134 |
2SC1380A |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 135 |
2SC2550 |
Silicon NPN Epitaxial type transistor (PCT Process) for industrial applications |
TOSHIBA |
| 136 |
2SC395 |
Silicon NPN epitaxial planar transistor (PCT Process) for industrial applications |
TOSHIBA |
| 137 |
2SC400 |
Silicon PNP Epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 138 |
2SC5549 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM |
TOSHIBA |
| 139 |
2SC5550 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH SPEED SWITCHING APPLICATIONS FOR INVERTER LIGHTING SYSTEM |
TOSHIBA |
| 140 |
2SC979 |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 141 |
2SC979A |
Silicon NPN epitaxial transistor (PCT Process) for industrial applications |
TOSHIBA |
| 142 |
2SD106A |
Ultra-compact dual SCALE driver for IGBTs with blocking voltages up to 1200V |
CONCEPT |
| 143 |
2SD2248 |
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive |
TOSHIBA |
| 144 |
2SK11 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
| 145 |
2SK1109 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
NEC |
| 146 |
2SK112 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
| 147 |
2SK113 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
| 148 |
2SK12 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
| 149 |
2SK15 |
Silicon N Channel junction transistor for industrial applications |
TOSHIBA |
| 150 |
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use |
NEC |
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