No. |
Part Name |
Description |
Manufacturer |
121 |
2N2904A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
122 |
2N2905 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
123 |
2N2905A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
124 |
2N2906 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
125 |
2N2906A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
126 |
2N2907 |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
127 |
2N2907A |
PNP Silicon Planar Transistor for medium level switching |
Newmarket Transistors NKT |
128 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
129 |
2N3053 |
NPN silicon annular transistor designed for medium-current applications |
Motorola |
130 |
2N3722 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
131 |
2N3723 |
NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications |
Motorola |
132 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
133 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
134 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
135 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
136 |
2N699 |
NPN silicon annular transistor designed for medium-current switching and amplifier applications |
Motorola |
137 |
2N718 |
NPN silicon annular Star transistor for medium current switching and amplifier applications |
Motorola |
138 |
2N869A |
PNP silicon annular low-power transistor designed for medium-speed, saturated switching applications |
Motorola |
139 |
2SA497 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
140 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
141 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
142 |
2SC3326 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
143 |
2SC3327 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS |
TOSHIBA |
144 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
145 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
146 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
147 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
148 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
149 |
2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
150 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
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