No. |
Part Name |
Description |
Manufacturer |
121 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
122 |
2N5655 |
0.5A Plastic NPN silicon, High Voltage Power Transistor |
Motorola |
123 |
2N5656 |
0.5A Plastic NPN silicon, High Voltage Power Transistor |
Motorola |
124 |
2N5657 |
0.5A Plastic NPN silicon, High Voltage Power Transistor |
Motorola |
125 |
2N5679 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
126 |
2N5679 |
10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
127 |
2N5680 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
128 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
129 |
2N5681 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
130 |
2N5681 |
10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
131 |
2N5682 |
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
Boca Semiconductor Corporation |
132 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
133 |
2N5831 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
134 |
2N5833 |
NPN small signal high voltage general purpose amplifier. |
Fairchild Semiconductor |
135 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
136 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
137 |
2N6211 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
138 |
2N6212 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
139 |
2N6213 |
MEDIUM-POWER HIGH VOLTAGE PNP POWER TRANSISTORS |
Boca Semiconductor Corporation |
140 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
141 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
142 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
143 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
144 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
145 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
146 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
147 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
148 |
2N6420 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
149 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
150 |
2N6421 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
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