| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 122 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 123 |
2N2221 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 124 |
2N2222 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
| 125 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
| 126 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 127 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 128 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
| 129 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 130 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 131 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
| 132 |
2N525 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 133 |
2N526 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 134 |
2N527 |
Germanium transistor, amplification and low speed switching |
COSEM |
| 135 |
2SA1359 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) LOW SPEED SWITCHING AUDIO FREQUENCY POWER AMPLIFIER |
TOSHIBA |
| 136 |
2SA634 |
PNP silicon transistor for audio frequency and low speed switching applications |
NEC |
| 137 |
2SB370AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output, Low Speed Switching |
Hitachi Semiconductor |
| 138 |
2SB536 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 139 |
2SB537 |
Audio Frequency power amplifier and low speed switching silicon epitaxial transistor |
NEC |
| 140 |
2SB628 |
Silicon epitaxial transistor, audio frequency power amplifier and low speed switching |
NEC |
| 141 |
2SB75AH |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 142 |
2SB75H |
Germanium PNP Alloyed Junction Transistor, intended for use in Low Speed Switching, Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 143 |
2SC1096 |
NPN silicon transistor for audio frequency and low speed switching applications |
NEC |
| 144 |
2SC1399 |
NPN silicon transistor, designed for use in driver stage of AF amplifier and low speed switching |
NEC |
| 145 |
2SC3422 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING |
TOSHIBA |
| 146 |
2SC945 |
NPN Silicon Transistor(AF amplifier and low speed switching) |
NEC |
| 147 |
2SD1308 |
NPN SILICON EPITAXIAL DARLINGTON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER AND LOW SPEED SWITCHING INDUSTRIAL USE |
Unknow |
| 148 |
2SD1564 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 149 |
2SD1589 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
| 150 |
2SD1590 |
Audio Frequency Power Amplifier and Low Speed Switching Industrial Use |
Unknow |
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