| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N78E |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 122 |
1N78F |
Silicon Diode - Microwave Ku-band Mixer: f=16,000 MHz; NF=12 to 7.5 dB |
Motorola |
| 123 |
1N82 |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 124 |
1N82A |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 125 |
1N82AG |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 126 |
1N82G |
Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB |
Motorola |
| 127 |
1N831 |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 128 |
1N831A |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 129 |
1N831B |
Silicon Microwave S-band Mixer; NF=8.3 to 6.5 dB |
Motorola |
| 130 |
1N832 |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 131 |
1N832A |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 132 |
1N832B |
Silicon Microwave X-band Mixer; NF=9.5 to 7.0 dB |
Motorola |
| 133 |
1N918 |
Microwave Ku-band Mixer |
Motorola |
| 134 |
1S1549 |
Silicon epitaxial planar schottky barrier mixer diode |
TOSHIBA |
| 135 |
1S1820 |
Silicon Schottky Barrier Diode, used for UHF TV Tuner Mixer |
Hitachi Semiconductor |
| 136 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
| 137 |
1S2187 |
Silicon epitaxial schottky barrier mixer diode, UHF Mixer Application |
TOSHIBA |
| 138 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 139 |
1SS101 |
Silicon Mixer Diode |
NEC |
| 140 |
1SS106 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 141 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 142 |
1SS16 |
Silicon UHF Detector & Mixer Diode |
NEC |
| 143 |
1SS198 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 144 |
1SS237 |
UHF Detector & Mixer Diode |
NEC |
| 145 |
1SS237(1) |
UHF Detector & Mixer Diode |
NEC |
| 146 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 147 |
1SS271 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE VHF~UHF MIXER APPLICATION |
TOSHIBA |
| 148 |
1SS286 |
Schottky Barrier Diodes for Detection and Mixer |
Hitachi Semiconductor |
| 149 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 150 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
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