No. |
Part Name |
Description |
Manufacturer |
121 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
122 |
2N6051 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
123 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
124 |
2N6052 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
125 |
2N6052 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
126 |
2N6053 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
127 |
2N6054 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
128 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
129 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
130 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
131 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
132 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
133 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
134 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
135 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
136 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
137 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
138 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
139 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
140 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
141 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
142 |
2N6386 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
143 |
2N6387 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
144 |
2N6388 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
145 |
2N6441 |
NPN silicon monolithic multiple transistors |
Motorola |
146 |
2N6442 |
NPN silicon monolithic multiple transistors |
Motorola |
147 |
2N6443 |
NPN silicon monolithic multiple transistors |
Motorola |
148 |
2N6444 |
NPN silicon monolithic multiple transistors |
Motorola |
149 |
2N6445 |
NPN silicon monolithic multiple transistors |
Motorola |
150 |
2N6446 |
NPN silicon monolithic multiple transistors |
Motorola |
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