No. |
Part Name |
Description |
Manufacturer |
121 |
LT5504EMS8#TR |
800MHz to 2.7GHz RF Measuring Receiver |
Linear Technology |
122 |
LT5504EMS8#TRPBF |
800MHz to 2.7GHz RF Measuring Receiver |
Linear Technology |
123 |
MAX11014 |
Automatic RF MESFET Amplifier Drain-Current Controllers |
MAXIM - Dallas Semiconductor |
124 |
MAX11014BGTM+ |
Automatic RF MESFET Amplifier Drain-Current Controllers |
MAXIM - Dallas Semiconductor |
125 |
MAX11014BGTM+T |
Automatic RF MESFET Amplifier Drain-Current Controllers |
MAXIM - Dallas Semiconductor |
126 |
MAX11015 |
Automatic RF MESFET Amplifier Drain-Current Controllers |
MAXIM - Dallas Semiconductor |
127 |
MCRF355 |
The MCRF355 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features optimized at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran |
Microchip |
128 |
MCRF360 |
The MCRF360 is a uniquely designed read-only passive Radio Frequency Identification (RFID) IC device with advanced anticollision features operating at 13.56 MHz. The device is powered remotely by rectifying RF magnetic fields that are tran |
Microchip |
129 |
MHW1815_D |
MHW1815 1805-1880 MHz, 15 W, 26 V, 32 dB RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
130 |
MHW1915_D |
MHW1915 1930-1990 MHz, 15 W, 26 V, 31 dB, RF Microwave Bipolar Power Amplifier - Archived |
Motorola |
131 |
MRF134 |
Trans RF MOSFET N-CH 65V 0.9A 4-Pin Case 211-07 |
New Jersey Semiconductor |
132 |
MRF136 |
Trans RF MOSFET N-CH 65V 2.5A 4-Pin Case 211-07 |
New Jersey Semiconductor |
133 |
MRF136Y |
Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02 |
New Jersey Semiconductor |
134 |
MRF138 |
Trans RF MOSFET N-CH 65V 5A 4-Pin |
New Jersey Semiconductor |
135 |
MRF141G |
Trans RF MOSFET N-CH 65V 32A 5-Pin Case 375-04 |
New Jersey Semiconductor |
136 |
MRF148A |
Trans RF MOSFET N-CH 120V 6A 4-Pin Case 211-07 |
New Jersey Semiconductor |
137 |
MRF171A |
Trans RF MOSFET N-CH 65V 4.5A 4-Pin Case 211-07 |
New Jersey Semiconductor |
138 |
MRF173 |
Trans RF MOSFET N-CH 65V 9A 4-Pin Case 211-11 |
New Jersey Semiconductor |
139 |
MRF173CQ |
Trans RF MOSFET N-CH 65V 9A 4-Pin Case 316-01 |
New Jersey Semiconductor |
140 |
MRF186 |
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET |
Motorola |
141 |
MRF284 |
Trans RF MOSFET N-CH 65V 3-Pin NI-360 |
New Jersey Semiconductor |
142 |
MRF284SC |
Trans RF MOSFET N-CH 65V 3-Pin NI-360S T/R |
New Jersey Semiconductor |
143 |
MRF372D |
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
Motorola |
144 |
MRF374 |
Trans RF MOSFET N-CH 65V 7A 5-Pin Case 375F-04 |
New Jersey Semiconductor |
145 |
MRF5S19100HD |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Motorola |
146 |
MRF5S19100HR3 |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Motorola |
147 |
MRF5S19100HSR3 |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Motorola |
148 |
MRF6522-60 |
Trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04 |
New Jersey Semiconductor |
149 |
MRF6522-70 |
Trans RF MOSFET N-CH 65V 7A 3-Pin NI-600 |
New Jersey Semiconductor |
150 |
NCP1526 |
400 mA, High−Efficiency, Step−Down Converter, Low Noise Voltage Regulator, Optimized for RF Module |
ON Semiconductor |
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