| No. |
Part Name |
Description |
Manufacturer |
| 121 |
10GL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE |
TOSHIBA |
| 122 |
10HC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 123 |
10HD11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 124 |
10JC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 125 |
10JD11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 126 |
10KC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 127 |
10KD11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 128 |
10LC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 129 |
10LD11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 130 |
10MC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 131 |
10MD11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 132 |
10NC11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 133 |
10ND11 |
General-Purpose silicon rectifier 12A |
TOSHIBA |
| 134 |
10RM100 |
High Voltage silicon rectifier 10kV |
SESCOSEM |
| 135 |
10RM120 |
High Voltage silicon rectifier 12kV |
SESCOSEM |
| 136 |
10RM150 |
High Voltage silicon rectifier 15kV |
SESCOSEM |
| 137 |
10RM200 |
High Voltage silicon rectifier 20kV |
SESCOSEM |
| 138 |
10RM220 |
High Voltage silicon rectifier 22kV |
SESCOSEM |
| 139 |
10RM250 |
High Voltage silicon rectifier 25kV |
SESCOSEM |
| 140 |
10RM60 |
High Voltage silicon rectifier 6kV |
SESCOSEM |
| 141 |
10RM80 |
High Voltage silicon rectifier 8kV |
SESCOSEM |
| 142 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 143 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 144 |
13003BR |
1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS |
Motorola |
| 145 |
13003BR |
NPN SILICON TRANSISTOR |
Wing Shing Computer Components |
| 146 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 147 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 148 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 149 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 150 |
1417-12 |
1.4-1.7GHz 12W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
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