| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1SV293 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 122 |
1SV304 |
Variable Capacitance Diode VCO for VHF Band Radio |
TOSHIBA |
| 123 |
1SV305 |
Variable Capacitance Diode VCO for VHF Band Radio |
TOSHIBA |
| 124 |
1SV306 |
Variable Capacitance Diode VCO for UHF Band Radio |
TOSHIBA |
| 125 |
1SV310 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
| 126 |
1SV311 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
| 127 |
1SV313 |
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO |
TOSHIBA |
| 128 |
1SV314 |
DIODE SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO |
TOSHIBA |
| 129 |
1SV328 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
| 130 |
1SV329 |
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio |
TOSHIBA |
| 131 |
1SV331 |
Variable Capacitance Diode Useful for VCO/TCXO |
TOSHIBA |
| 132 |
1T367 |
UHF band VCO |
SONY |
| 133 |
2,125AND1,0625GBD,LC,2X5 |
Transceivers by Form-factor MSA - Multimode 850nm VCSEL TRX |
Infineon |
| 134 |
2.125AND1.0625GBD,LC,SFP, |
Transceivers by Form-factor MSA - SFP - Multimode 850nm VCSEL; 2.125 and 1.0625 Gbit/s FC; 1.25 GBE TRX with LC-Connector |
Infineon |
| 135 |
2DA2018 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
| 136 |
2DA2018-7 |
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR |
Diodes |
| 137 |
2N1613 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 138 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 139 |
2N1893 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 140 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 141 |
2N2218 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 142 |
2N2218A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 143 |
2N2219 |
0.800W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 144 |
2N2219A |
0.800W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 35 hFE. |
Continental Device India Limited |
| 145 |
2N2219A |
Ic=800mA, Vce=10V transistor |
MCC |
| 146 |
2N2221 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 20 hFE. |
Continental Device India Limited |
| 147 |
2N2221A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 25 hFE. |
Continental Device India Limited |
| 148 |
2N2222 |
0.500W General Purpose NPN Metal Can Transistor. 30V Vceo, 0.800A Ic, 30 hFE. |
Continental Device India Limited |
| 149 |
2N2222A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. |
Continental Device India Limited |
| 150 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
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