No. |
Part Name |
Description |
Manufacturer |
121 |
1N4001 |
1 AMP, 50V GLASS RECTIFIER |
ITT Semiconductors |
122 |
1N4001 |
1.0A, 50V ultra fast recovery rectifier |
MCC |
123 |
1N4001GP |
1.0A, 50V ultra fast recovery rectifier |
MCC |
124 |
1N4009 |
25 V, 500 mW ultra high speed diode |
BKC International Electronics |
125 |
1N4148 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
126 |
1N4148-1 |
100 V, 500 mW silicon switching diode |
BKC International Electronics |
127 |
1N4149 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
128 |
1N4150 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 200mA If |
Continental Device India Limited |
129 |
1N4150-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
130 |
1N4151 |
50 V, 500 mW high speed diode |
BKC International Electronics |
131 |
1N4151 |
500 mW Axial Switching Diode, 50.0V Vr, 0.100uA Ir, 1.00V Vf @ 50mA If |
Continental Device India Limited |
132 |
1N4152 |
30 V, 500 mW high speed diode |
BKC International Electronics |
133 |
1N4153 |
50 V, 500 mW high speed diode |
BKC International Electronics |
134 |
1N4153-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
135 |
1N4154 |
25 V, 500 mW high speed diode |
BKC International Electronics |
136 |
1N4154-1 |
75 V, 500 mW silicon switching diode |
BKC International Electronics |
137 |
1N417 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
138 |
1N418 |
60 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
139 |
1N419 |
80 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
140 |
1N4305 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
141 |
1N4446 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
142 |
1N4447 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
143 |
1N4448 |
100 V, 500 mW silicon planar diode |
BKC International Electronics |
144 |
1N4449 |
75 V, 500 mW high conductance ultra fast switching diode |
BKC International Electronics |
145 |
1N4454 |
50 V, 500 mW ultra fast low capacitance diode |
BKC International Electronics |
146 |
1N447 |
75 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
147 |
1N448 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
148 |
1N449 |
50 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
149 |
1N450 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
150 |
1N451 |
170 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
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