No. |
Part Name |
Description |
Manufacturer |
121 |
2N7106 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
122 |
2N7107 |
10 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
123 |
2N7108 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
124 |
2N7109 |
20 V, 70 ohm, N-channel enhancement-mode D-MOS FET switch |
Topaz Semiconductor |
125 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
126 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
127 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
128 |
2SC3580 |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 700mA Ic, 150 to 800 hFE. Complementary 2SA1398 |
Isahaya Electronics Corporation |
129 |
2SC5226A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP |
ON Semiconductor |
130 |
2SC5227A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single CP |
ON Semiconductor |
131 |
2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP |
ON Semiconductor |
132 |
2SD917 |
Silicon NPN triple diffused planar transistor, 330V, 7A |
Panasonic |
133 |
2SK3748 |
N-Channel Power MOSFET, 1500V, 4A, 7Ohm, TO-3PF-3L |
ON Semiconductor |
134 |
2SK4065 |
N-Channel Power MOSFET, 75V, 100A, 6mOhm, TO-263-2L |
ON Semiconductor |
135 |
2SK4089LS |
Power MOSFET 650 V, 12 A, 720 mOhm Single N-Channel TO-220FL(LS) |
ON Semiconductor |
136 |
2SK4126 |
Power MOSFET 650 V, 15 A, 720 mOhm Single N-Channel TO-3PB |
ON Semiconductor |
137 |
2SK4171 |
Power MOSFET 60 V, 100 A, 7.2 mOhm Single N-Channel |
ON Semiconductor |
138 |
3102UF |
200 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
139 |
3106UF |
600 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
140 |
3110UF |
1000 V three phase bridge 2 A forward current, 70 ns recovery time |
Voltage Multipliers |
141 |
3302UF |
200 V three phase bridge 9-10 A forward current, 70 ns recovery time |
Voltage Multipliers |
142 |
3306UF |
600 V three phase bridge 9-10 A forward current, 70 ns recovery time |
Voltage Multipliers |
143 |
3310UF |
1000 V three phase bridge 9-10 A forward current, 70 ns recovery time |
Voltage Multipliers |
144 |
3402UFA |
200 V three phase bridge 18-20 A forward current, 70 ns recovery time |
Voltage Multipliers |
145 |
3406UFA |
600 V three phase bridge 18-20 A forward current, 70 ns recovery time |
Voltage Multipliers |
146 |
3410UFA |
1000 V three phase bridge 18-20 A forward current, 70 ns recovery time |
Voltage Multipliers |
147 |
55GN01CA |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP |
ON Semiconductor |
148 |
55GN01FA |
RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single SSFP |
ON Semiconductor |
149 |
5962-89839072A |
High performance E2CMOS PLD generic array logic, 7.5ns |
Lattice Semiconductor |
150 |
5962-8983907RA |
High performance E2CMOS PLD generic array logic, 7.5ns |
Lattice Semiconductor |
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