| No. |
Part Name |
Description |
Manufacturer |
| 121 |
17S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
| 122 |
18S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
| 123 |
18S |
1/4 in [6.35mm] Sq. Wirewound Trimmers, Precious Metal Wiper, Solderable Leads, Special Configurations Available, Military Quality at Affordable Prices |
Vishay |
| 124 |
199D |
Solid Tantalum Capacitors, Solid-Electrolyte TANTALEX® Capacitors, Dipped Radial, Conformal Package, Non-Reversible, Resin-Coated, Radial-Lead |
Vishay |
| 125 |
1N188 |
Photosensitive Device IR(dark)=20uA 40V, Sensitivity = 10uA/mW |
Motorola |
| 126 |
1N189 |
Photosensitive Device; RD=4,000 ohm, Sensitivity = 0.083%/fc |
Motorola |
| 127 |
1N2175 |
Photosensitive Device IR(dark)=0.5µA 50V, Sensitivity=0.22µA/mW/cm2 |
Motorola |
| 128 |
1N3734 |
Photosensitive Device BV=100V, Sensitivity=0.05µA/fc |
Motorola |
| 129 |
1N38AH |
Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier |
Hitachi Semiconductor |
| 130 |
1N4001 |
50 V, silicon rectifier diode |
BKC International Electronics |
| 131 |
1N4001A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 132 |
1N4002 |
100 V, silicon rectifier diode |
BKC International Electronics |
| 133 |
1N4002A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 134 |
1N4003 |
200 V, silicon rectifier diode |
BKC International Electronics |
| 135 |
1N4003A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 136 |
1N4004 |
400 V, silicon rectifier diode |
BKC International Electronics |
| 137 |
1N4004A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 138 |
1N4005 |
600 V, silicon rectifier diode |
BKC International Electronics |
| 139 |
1N4005A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 140 |
1N4006 |
800 V, silicon rectifier diode |
BKC International Electronics |
| 141 |
1N4006A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 142 |
1N4007 |
1000 V, silicon rectifier diode |
BKC International Electronics |
| 143 |
1N4007A |
Silicon difused type rectifier diode, suffix A means are designed for automatic insertion |
TOSHIBA |
| 144 |
1N4148 |
Silicon diodes, signal and fast rectification |
SESCOSEM |
| 145 |
1N4370 |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-10% standard tolerance. |
Jinan Gude Electronic Device |
| 146 |
1N4370A |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 147 |
1N4370C |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 148 |
1N4370D |
500mW, silicon zener diode. Zener voltage 2.4 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 149 |
1N4371A |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 150 |
1N4371C |
500mW, silicon zener diode. Zener voltage 2.7 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
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