| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2EZ56 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 122 |
2EZ62 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 123 |
2EZ68 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 124 |
2EZ75 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 125 |
2EZ82 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 126 |
2EZ91 |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts) |
Panjit International Inc |
| 127 |
2N2270 |
1.000W General Purpose NPN Metal Can Transistor. 45V Vceo, 1.000A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 128 |
2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 129 |
2N3053 |
5.000W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.700A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 130 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 131 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 132 |
2N4957 |
PNP silicon high frequency transistor 1.2GHz - 2.0mAdc |
Motorola |
| 133 |
2N4958 |
PNP silicon high frequency transistor 1.0GHz - 2.0mAdc |
Motorola |
| 134 |
2N4959 |
PNP silicon high frequency transistor 1.0GHz - 2.0mAdc |
Motorola |
| 135 |
2N5179 |
0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE. |
Continental Device India Limited |
| 136 |
2N5179 |
NPN silicon RF high frequency transistor 4.5dB - 200MHz |
Motorola |
| 137 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 138 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
| 139 |
2N6200 |
B40-28 40 WATTS - 28 VOLTS 100-200 MHZ |
Acrian |
| 140 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
| 141 |
2N915 |
0.360W General Purpose NPN Metal Can Transistor. 50V Vceo, A Ic, 50 - 200 hFE. |
Continental Device India Limited |
| 142 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 143 |
53246 |
RADIATION TOLERANT 40VDC - 2A SOLID STATE RELAY |
Micropac Industries |
| 144 |
53250 |
RADIATION TOLERANT 40VDC - 2A SOLID STATE RELAY |
Micropac Industries |
| 145 |
53257 |
RADIATION TOLERANT 120VDC - 2A SOLID STATE RELAY |
Micropac Industries |
| 146 |
A0~A14 |
Low Power Slow SRAM - 256Kb |
Hynix Semiconductor |
| 147 |
A0~A17 |
Low Power Slow SRAM - 2Mb |
Hynix Semiconductor |
| 148 |
AD8313 |
0.1 - 2.5 GHz, 70 dB Logarithmic Detector / Controller |
Analog Devices |
| 149 |
AD8314 |
0.1 - 2.5 GHz, 45 dB Logarithmic Detector / Controller |
Analog Devices |
| 150 |
AD8314ACP-EVAL |
0.1 - 2.5 GHz, 45 dB Logarithmic Detector / Controller |
Analog Devices |
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