| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AAT4618IJS-1.0-1-T1 |
Current Limited Load Switch |
Skyworks Solutions |
| 122 |
AAT4618IJS-1.0-T1 |
Current Limited Load Switch |
Skyworks Solutions |
| 123 |
ADP3203JRU-1.0-RL |
1 Or 2 Phase IMVP-III Compatible Core Controller For Latest Intel Mobile Processors |
Analog Devices |
| 124 |
ADP3203JRU-1.0-RL7 |
1 Or 2 Phase IMVP-III Compatible Core Controller For Latest Intel Mobile Processors |
Analog Devices |
| 125 |
AP2127DN-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 126 |
AP2127K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 127 |
AP2127R-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 128 |
AP2128K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 129 |
AP2129K-1.0TRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR |
Diodes |
| 130 |
AV101-12 |
HIP3™ Variable Attenuator 0.80-1.00 GHz |
Skyworks Solutions |
| 131 |
AV109-73 |
GaAs IC 35 dB Voltage Variable Attenuator Single Positive 3 V Control 0.8-1.0 GHz |
Skyworks Solutions |
| 132 |
AV111-12 |
HIP3™ Variable Attenuator 0.80-1.00 GHz |
Skyworks Solutions |
| 133 |
EGP10A |
-1.0 Ampere Glass Passivated High Efficiency Rectifiers |
Fairchild Semiconductor |
| 134 |
GF1A |
-1.0 Ampere Glass Passivated Rectifier |
Fairchild Semiconductor |
| 135 |
HM514258AJP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 136 |
HM514258AJP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 137 |
HM514258AJP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 138 |
HM514258AJP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 139 |
HM514258AJP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 140 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 141 |
HM514258AP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 142 |
HM514258AP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 143 |
HM514258AP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 144 |
HM514258AP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 145 |
HM514258AZP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 146 |
HM514258AZP-12 |
120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 147 |
HM514258AZP-6 |
60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 148 |
HM514258AZP-7 |
70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 149 |
HM514258AZP-8 |
80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 150 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| | | |
