| No. |
Part Name |
Description |
Manufacturer |
| 121 |
PDU1032H-12M |
Delay 12 +/-1.5 ns, 5-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 122 |
PDU1032H-12MC4 |
Delay 12 +/-1.5 ns, 5-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 123 |
PDU1032H-15 |
Delay 15 +/-1.5 ns, 5-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 124 |
PDU1032H-15C4 |
Delay 15 +/-1.5 ns, 5-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 125 |
PDU1032H-15M |
Delay 15 +/-1.5 ns, 5-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 126 |
PDU1032H-15MC4 |
Delay 15 +/-1.5 ns, 5-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 127 |
PDU1064H-10 |
Delay 10 +/-1.5 ns, 6-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 128 |
PDU1064H-10M |
Delay 10 +/-1.5 ns, 6-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 129 |
PDU108H-20 |
Delay 20 +/-1.5 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 130 |
PDU108H-20C3 |
Delay 20 +/-1.5 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 131 |
PDU108H-20M |
Delay 20 +/-1.5 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 132 |
PDU108H-20MC3 |
Delay 20 +/-1.5 ns, 3-BIT, ECL-interfaced programmable delay line |
Data Delay Devices Inc |
| 133 |
PPG312F-5 |
5 +/-1.5 ns, 12-BIT, programmable pulse generator |
Data Delay Devices Inc |
| 134 |
PPG312F-5C5 |
5 +/-1.5 ns, 12-BIT, programmable pulse generator |
Data Delay Devices Inc |
| 135 |
PPG312F-5M |
5 +/-1.5 ns, 12-BIT, programmable pulse generator |
Data Delay Devices Inc |
| 136 |
PPG312F-5MC5 |
5 +/-1.5 ns, 12-BIT, programmable pulse generator |
Data Delay Devices Inc |
| 137 |
SS8550 |
-40 V, -1.5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
| 138 |
TMS4416-12 |
120ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 139 |
TMS4416-15 |
150ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 140 |
TMS4416-20 |
200ns; V(except Vdd): -1.5 to +10.0V; 50mA; 1W; 16,384-word by 4-bit dynamic RAM |
Texas Instruments |
| 141 |
Z100F |
10000 V rectifier 0.5-1.5 A forward current, 200 ns recovery time |
Voltage Multipliers |
| 142 |
Z100SG |
10000 V rectifier 0.5-1.5 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 143 |
Z100UFG |
10000 V rectifier 0.5-1.5 A forward current,100 ns recovery time |
Voltage Multipliers |
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