No. |
Part Name |
Description |
Manufacturer |
121 |
MSC23837A-60DS18 |
8,388,608-word x 36-bit dynamic RAM module |
OKI electronic components |
122 |
MSC23B136D-60DS4 |
1,048,576 word by 36-bit dynamic RAM module |
OKI electronic components |
123 |
MSC23B2321D-60DS4 |
2,097,152-word x 32-bit dynamic RAM module |
OKI electronic components |
124 |
MSC23B236A-60DS8 |
2,097,152-word x 36-bit DRAM module |
OKI electronic components |
125 |
MSC23B236D-60DS8 |
2,097,152-word x 36-bit dynamic RAM module |
OKI electronic components |
126 |
RB050L-60DD |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
127 |
RB050L-60DDTE25 |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
128 |
RB055L-60DD |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
129 |
RB055L-60DDTE25 |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
130 |
RB058L-60DD |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
131 |
RB058L-60DDTE25 |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
132 |
RB068L-60DD |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
133 |
RB068L-60DDTE25 |
Schottky Barrier Diode (corresponds to AEC-Q101) |
ROHM |
134 |
TMS416400-60DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
135 |
TMS417400-60DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
136 |
TMS417400-60DR |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
137 |
TMS417400A-60DJ |
4 194 304-WORD BY 4-BIT PAGE-MODE DRAM |
Texas Instruments |
138 |
TMS417400A-60DR |
4 194 304-WORD BY 4-BIT PAGE-MODE DRAM |
Texas Instruments |
139 |
TMS417409A-60DJ |
4 194 304-WORD BY 4-BIT EXTENDED DATA OUT DRAMS |
Texas Instruments |
140 |
TMS417409A-60DR |
4 194 304-WORD BY 4-BIT EXTENDED DATA OUT DRAMS |
Texas Instruments |
141 |
TMS417800A-60DZ |
2 097 152-WORD BY 8-BIT PAGE-MODE DRAM |
Texas Instruments |
142 |
TMS417809A-60DZ |
2 097 152-Word By 8-Bit High-Speed DRAMS |
Texas Instruments |
143 |
TMS418160-60DZ |
1 048 576-Word By 16-Bit High-Speed DRAMS |
Texas Instruments |
144 |
TMS418160-60DZR |
1 048 576-Word By 16-Bit High-Speed DRAMS |
Texas Instruments |
145 |
TMS418160A-60DZ |
1048576 by 16 bit dynamic random-access memory, single 5-V power supply, 1024-cycle refresh in 16 ms, 60 ns |
Texas Instruments |
146 |
TMS418160A-60DZR |
1 048 576-WORD BY 16-BIT PAGE-MODE DRAM |
Texas Instruments |
147 |
TMS418169-60DZ |
1 048 576-Word By 16-Bit Extended Data Out High-Speed DRAMS |
Texas Instruments |
148 |
TMS418169A-60DZ |
1 048 576-WORD BY 16-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
149 |
TMS418169A-60DZR |
1 048 576-WORD BY 16-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
150 |
TMS427409A-60DGA |
4 194 304-WORD BY 4-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
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