No. |
Part Name |
Description |
Manufacturer |
121 |
KM416V1004AJ-F6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
122 |
KM416V1004AR-F6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
123 |
KM416V1004AT-F6 |
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns |
Samsung Electronic |
124 |
KM432S2030CT-F6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL |
Samsung Electronic |
125 |
LLQ1608-F68N |
Wirewound Chip Inductors |
TOKO |
126 |
M27256-F6 |
NMOS 256K (32K x 8) UV EPROM, 250ns |
SGS Thomson Microelectronics |
127 |
M2732A-F6 |
NMOS 32K (4K x 8) UV EPROM, 250ns |
SGS Thomson Microelectronics |
128 |
M27512-F6 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns |
SGS Thomson Microelectronics |
129 |
M2764A-F6 |
NMOS 64K (8 x 8) UV EPROM, 250ns |
SGS Thomson Microelectronics |
130 |
M55302L-F60H |
M55302 |
etc |
131 |
M55302L-F60L |
M55302 |
etc |
132 |
M55302L-F60M |
M55302 |
etc |
133 |
M55302L-F60S |
M55302 |
etc |
134 |
M55302L-F66H |
M55302 |
etc |
135 |
M55302L-F66L |
M55302 |
etc |
136 |
M55302L-F66M |
M55302 |
etc |
137 |
M55302L-F66S |
M55302 |
etc |
138 |
M55355L-F60H |
M55302 |
etc |
139 |
M55355L-F60L |
M55302 |
etc |
140 |
M55355L-F60M |
M55302 |
etc |
141 |
M55355L-F60S |
M55302 |
etc |
142 |
M55355L-F66H |
M55302 |
etc |
143 |
M55355L-F66M |
M55302 |
etc |
144 |
M55355L-F66S |
M55302 |
etc |
145 |
Q62702-F610 |
PNP SILICON PLANAR TRANSISTOR |
Siemens |
146 |
Q62702-F612 |
PNP SILICON PLANAR TRANSISTOR |
Siemens |
147 |
Q62702-F621 |
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) |
Siemens |
148 |
Q62702-F622 |
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
149 |
Q62702-F626 |
PNP SILICON PLANAR TRANSISTOR |
Siemens |
150 |
Q62702-F640 |
NPN Silicon RF Transistor (For SAW filter driver applications in TV tuners For linear broadband VHF amplifier stages) |
Siemens |
| | | |