| No. |
Part Name |
Description |
Manufacturer |
| 121 |
78M6618-IMR/F/PW1 |
Octal Power and Energy Measurement IC |
MAXIM - Dallas Semiconductor |
| 122 |
78M6618-IMR/F/PW3 |
Octal Power and Energy Measurement IC |
MAXIM - Dallas Semiconductor |
| 123 |
78M6618-IMR/F/PW4 |
Octal Power and Energy Measurement IC |
MAXIM - Dallas Semiconductor |
| 124 |
78M6618-IMR/F2 |
Octal Power and Energy Measurement IC |
MAXIM - Dallas Semiconductor |
| 125 |
78M6631-IM/F |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 126 |
78M6631-IM/F/P2 |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 127 |
78M6631-IM/F/P48 |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 128 |
78M6631-IM/F/PE1 |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 129 |
78M6631-IMR/F |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 130 |
78M6631-IMR/F/P2 |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 131 |
78M6631-IMR/F/P48 |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 132 |
78M6631-IMR/F/PE1 |
3-Phase Power Measurement and Monitoring SoC |
MAXIM - Dallas Semiconductor |
| 133 |
78P2351R-IM/F |
Serial 155M NRZ-to-CMI Converter |
MAXIM - Dallas Semiconductor |
| 134 |
78P2351R-IMR/F |
Serial 155M NRZ-to-CMI Converter |
MAXIM - Dallas Semiconductor |
| 135 |
AB-026 |
A LOW NOISE, LOW DISTORTION DESIGN FOR ANTIALIASING AND ANTI-IMAGING FILTERS |
Burr Brown |
| 136 |
AB-043 |
USE LOW-IMPEDANCE BRIDGES ON 4-20mA CURRENT LOOPS |
Burr Brown |
| 137 |
AT89C51ED2-IM |
8-bit Flash Microcontroller |
Atmel |
| 138 |
AT89C51ID2-IM |
8-bit Flash Microcontroller |
Atmel |
| 139 |
AT89C51RD2-IM |
8-bit Flash Microcontroller |
Atmel |
| 140 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 141 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 142 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 143 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 144 |
FDC2112 |
Noise-immune Capacitive Sensing Solution for Proximity Sensing 12-WSON -40 to 125 |
Texas Instruments |
| 145 |
FDC2112-Q1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 146 |
FDC2112DNTR |
Noise-immune Capacitive Sensing Solution for Proximity Sensing 12-WSON -40 to 125 |
Texas Instruments |
| 147 |
FDC2112DNTT |
Noise-immune Capacitive Sensing Solution for Proximity Sensing 12-WSON -40 to 125 |
Texas Instruments |
| 148 |
FDC2112QDNTRQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 149 |
FDC2112QDNTTQ1 |
2-channel, Noise-immune, AEC-Q100 qualified, 12-bit Capacitive Sensing Solution 12-WSON -40 to 125 |
Texas Instruments |
| 150 |
FDC2114 |
Noise-immune Capacitive Sensing Solution for Proximity Sensing 16-WQFN -40 to 125 |
Texas Instruments |
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