| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
| 122 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
| 123 |
2N6264 |
Medium power silicon N-P-N transistor. 170V, 50W. |
General Electric Solid State |
| 124 |
2N6266 |
5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor |
RCA Solid State |
| 125 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
| 126 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
| 127 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
| 128 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
| 129 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
| 130 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
| 131 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 132 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
| 133 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 134 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
| 135 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 136 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
| 137 |
2N6291 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 138 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
| 139 |
2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 140 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
| 141 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 142 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
| 143 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
| 144 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
| 145 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 146 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 147 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 148 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 149 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| 150 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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