| No. |
Part Name |
Description |
Manufacturer |
| 121 |
269-D |
69-Type 14xx nm DFB Pump Laser Module |
Agere Systems |
| 122 |
269-D |
269-Type 1480 nm Pump Laser Module |
Agere Systems |
| 123 |
2SC5004-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 124 |
2SC5006-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 125 |
2SC5007-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 126 |
2SC5008-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 127 |
2SC5009-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 128 |
2SC5010-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 129 |
2SC5011-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 130 |
2SC5012-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 131 |
2SC5013-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 132 |
2SC5014-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 133 |
2SC5015-T1_-T2 |
NPN epitaxial-type silicon transistor |
NEC |
| 134 |
2SJ353-T |
P-channel MOS-type silicon field effect transistor (-60 |
NEC |
| 135 |
2SK2090-T1 |
N-channel MOS-type silicon field effect transistor |
NEC |
| 136 |
2SK2090-T2 |
N-channel MOS-type silicon field effect transistor |
NEC |
| 137 |
2SK334 |
Silicon N-Channel Junction-Type Field Effect TR For CONDENSER MICROPHONES |
SANYO |
| 138 |
3970 |
3970-Type 1550 nm Transmitter |
Agere Systems |
| 139 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 140 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
| 141 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 142 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 143 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 144 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 145 |
3N157 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 146 |
3N157A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 147 |
3N158 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 148 |
3N158A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 149 |
3N160 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| 150 |
3N161 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
| | | |
