| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N6373 |
5.00V; 160A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 122 |
1N6374 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 123 |
1N6375 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 124 |
1N6376 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 125 |
1N6377 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 126 |
1N6378 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 127 |
1N6379 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 128 |
1N6380 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 129 |
1N6381 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 130 |
1N6382 |
8.00V; 100A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 131 |
1N6383 |
10.00V; 90A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 132 |
1N6384 |
12.00V; 70A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 133 |
1N6385 |
15.00V; 60A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 134 |
1N6386 |
18.00V; 50A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 135 |
1N6387 |
22.00V; 40A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 136 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 137 |
1N6389 |
45.00V; 19A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 138 |
1N64 |
Diode Switching 125V 0.0003A 2-Pin DO-35 |
New Jersey Semiconductor |
| 139 |
1N82 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 140 |
1N83 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 141 |
1N85 |
Diode Switching 50V 0.005A 2-Pin Case H |
New Jersey Semiconductor |
| 142 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 143 |
1N914 |
500 mW Axial Switching Diode, 75.0V Vr, 5.000uA Ir, 1.00V Vf @ 10mA If |
Continental Device India Limited |
| 144 |
1N914B |
500 mW Axial Switching Diode, 20.0V Vr, 0.030uA Ir, 1.00V Vf @ 100mA If |
Continental Device India Limited |
| 145 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
| 146 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
| 147 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
| 148 |
20KW104 |
104.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 149 |
20KW104A |
104.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 150 |
20KW112 |
112.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
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